Semiconductor memory device and method for manufacturing the same

1. A semiconductor memory device comprising: a semiconductor layer; a control gate electrode; an organic molecular layer provided between the semiconductor layer and the control gate electrode; and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer, wherein the first insulating layer contains a structure formed by chemical bonding of a first precursor described by molecular formula (1) and a second precursor described by molecular formula (2):

wherein X, Y are independently selected from among silyl ether, phosphoryl ether, alkoxy, carbonyl, and ether, n is an integer greater than 0, R1 to R4 are independently selected from hydrogen, oxygen, silicon, hydrocarbon, halogen, halogenated silane, alkoxy silane, and silyl ether, and m is an integer greater than 0.

2. The device according to claim 1 , wherein carbon number of each of the alkyl chains is between 4 and 30 inclusive.

3. The device according to claim 1 , wherein the first layer is a monomolecular film.

4. The device according to claim 1 , further comprising an inorganic second insulating layer provided between the first insulating layer and the semiconductor layer.

5. The device according to claim 1 , further comprising a third insulating layer between the organic molecular layer and the control gate electrode.

6. The device according to claim 1 , wherein the first layer is chemically bonded to the semiconductor layer.

7. The device according to claim 4 , wherein the first layer is chemically bonded to the second insulating layer.

8. The device according to claim 1 , wherein the organic molecular layer has oxidation-reduction molecules.