IP Library Granted Patent US 9,704,713
Granted Patent B1
US 9,704,713 · App. 15/091,798 · Granted Jul 11, 2017

Siloxanes, doped siloxanes, methods for their synthesis, compositions containing the same, and films formed therefrom

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Quick Facts
Patent No.
US 9,704,713
App. No.
15/091,798
Granted
Jul 11, 2017
Kind
B1
Abstract

In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.

Claims (21)

1. A siloxane, germoxane, or silagermoxane compound, comprising at least 7 units of the formula

—(OA[O d H] 2 )— or —(OA[O d H] 3 ), where each instance of A is independently Si or Ge, and each instance of d is independently 0 or 1, and one or more units of the formula O c DR 1 p , where each instance of D is independently Sb, As, P, B or Al, each instance of p is independently an integer from 0 to 2, and each instance of R 1 is independently alkyl, aryl, aralkyl, H, OH or AR 2 , where R 2 is H, OH or —(OA) y (O c H) 2y+1 , y is an integer from 1 to 4, and each instance of c independently 0 or 1.

2. The compound of claim 1 , wherein A is Si.

3. The compound of claim 2 , having the formula -(c-(OA) q [O d H] 2q-x )—, where q is an integer from 7 to 12, and x is an integer from 0 to q.

4. The compound of claim 3 , wherein d=0.

5. The compound of claim 2 , having at least 15 units of the formula ═(OSi[O d H])—, —(OSi[O d H] 2 )— or —(OSi[O d H] 3 ).

6. The compound of claim 5 , wherein d=0.

7. The compound of claim 1 , wherein d=0.

8. The compound of claim 1 , having at least 15 units of the formula ═(OA[O d H])—, —(OA[O d H] 2 )— or —(OA[O d H] 3 ).

9. The compound of claim 8 , wherein d=0.

10. The compound of claim 8 , wherein D is B.

11. The compound of claim 8 , wherein D is P.

12. The compound of claim 8 , wherein R 1 is C 1 -C 6 alkyl or C 6 -C 12 aryl.

13. The compound of claim 8 , wherein R 1 is H or OH.

14. The compound of claim 1 , wherein D is B and c=0, or D is P and c=1.

15. The compound of claim 1 , wherein D is B.

16. The compound of claim 1 , wherein D is P.

17. The compound of claim 1 , wherein R 1 is C 1 -C 6 alkyl.

18. The compound of claim 1 , wherein R 1 is C 6 -C 12 aryl.

19. The compound of claim 18 , wherein R 1 is phenyl.

20. The compound of claim 1 , wherein R 1 is H or OH.

Assignments (2)
CHANGE OF NAME Recorded Aug 22, 2022
From: THIN FILM ELECTRONICS ASA
To: ENSURGE MICROPOWER ASA
Reel/Frame 061298/0249 →
SECURITY INTEREST Recorded Jun 9, 2020
From: THIN FILM ELECTRONICS, INC.; THIN FILM ELECTRONICS, ASA
To: UTICA LEASECO, LLC
Reel/Frame 053472/0129 →