Method of manufacturing semiconductor device
A device region ( 17 ) is formed at a central part of a semiconductor wafer ( 2 ) and a ring-shaped reinforced portion ( 18 ) which is thicker than the device region ( 17 ) is formed on an outer circumference of the device region ( 17 ). After forming the device region ( 17 ) and the ring-shaped reinforced portion ( 18 ), the semiconductor wafer ( 2 ) is subjected to wet treatment. After the wet treatment, the semiconductor wafer ( 2 ) is rotated and dried. A center position of the semiconductor wafer ( 2 ) is different from a center position of the ring-shaped reinforced portion ( 18 ).
1. A method of manufacturing a semiconductor device comprising:
forming a device region at a central part of a semiconductor wafer and a ring-shaped reinforced portion which is thicker than the device region on an outer circumference of the device region;
after forming the device region and the ring-shaped reinforced portion, subjecting the semiconductor wafer to wet treatment; and
after the wet treatment, rotating and drying the semiconductor wafer,
wherein a center position of the semiconductor wafer is different from a center position of the ring-shaped reinforced portion, and
the center position of the semiconductor wafer is a center of rotation when rotating and drying the semiconductor wafer.
2. The method of manufacturing a semiconductor device of claim 1 , wherein a difference between the center position of the semiconductor wafer and the center position of the ring-shaped reinforced portion is 20 μm or more.
3. The method of manufacturing a semiconductor device of claim 1 , wherein the device region and the ring-shaped reinforced portion are formed by grinding the central part of the semiconductor wafer.
4. The method of manufacturing a semiconductor device of claim 3 , wherein the semiconductor wafer is ground using a first grinding stone to form a first concave portion and an interior of the first concave portion is ground using a second grinding stone having a smaller abrasive grain size than the first grinding stone to form a second concave portion so that the device region and the ring-shaped reinforced portion are formed.
5. The method of manufacturing a semiconductor device of claim 4 , wherein a center position of the first concave portion is the center position of the ring-shaped reinforced portion.
6. The method of manufacturing a semiconductor device of claim 4 , wherein a center position of the second concave portion is the center position of the ring-shaped reinforced portion.
7. The method of manufacturing a semiconductor device of claim 1 , wherein height of the ring-shaped reinforced portion is 300 μm or more.