Nonvolatile memory device and method of manufacturing the same
View Patent ↗According to one embodiment, a plurality of first wirings are disposed in a first direction and a second direction which intersect with each other, and extended in a third direction. A second wiring stack is configured to include second wirings and interlayer insulating films which are extended and alternately stacked in the second direction. A memory cell includes, in the first direction, a first variable resistive layer which is disposed on a side near the first wiring and a second variable resistive layer which is disposed on a side near the second wiring. The second variable resistive layer is disposed between the interlayer insulating films in the third direction, and made of a material which is obtained by oxidizing the second wiring.
1. A nonvolatile memory device comprising:
a plurality of first wirings configured to be arranged in a first direction and a second direction intersecting with each other, and extended in a third direction perpendicular to the first direction and the second direction;
second wiring stacks configured to include second wirings and interlayer insulating films which are extended and alternately stacked in the third direction; and
memory cells configured to be disposed at positions between the first wirings and the second wirings where the first wirings and the second wirings intersect, wherein
the memory cell includes, in the first direction, a first variable resistive layer which is disposed on a side near the first wiring and a second variable resistive layer which is disposed on a side near the second wiring,
the second variable resistive layer is disposed between the interlayer insulating films in the third direction, and
the second variable resistive layer is made of an oxide of a material constituting the second wiring, and
an oxygen deficiency of the first variable resistive layer is smaller than that of the second variable resistive layer.
2. The nonvolatile memory device according to claim 1 , wherein
a boundary between the second wiring and the second variable resistive layer is positioned further away, in the first direction, from the first wiring than a side surface of the interlayer insulating film facing the first direction.
3. The nonvolatile memory device according to claim 2 , wherein
a boundary between the first variable resistive layer and the second variable resistive layer is positioned further away, in the first direction, from the first wiring than the side surface of the interlayer insulating film facing the first direction.
4. The nonvolatile memory device according to claim 2 , wherein
a boundary between the first variable resistive layer and the second variable resistive layer is positioned closer, in the first direction, to the first wiring than the side surface of the interlayer insulating film facing the first direction.
5. The nonvolatile memory device according to claim 1 , wherein
a film thickness of the first variable resistive layer is thinner than that of the second variable resistive layer.
6. The nonvolatile memory device according to claim 5 , wherein
the second variable resistive layer is made of a material selected from a group consisting of tungsten oxide, nickel oxide, titanium oxide, tantalum oxide, tungsten oxynitride, titanium oxynitride, tantalum oxynitride, all of which are oxygen-deficient.
7. The nonvolatile memory device according to claim 1 , wherein
a resistivity of the first variable resistive layer is larger than that of the second variable resistive layer.
8. The nonvolatile memory device according to claim 1 , wherein
a band gap of the first variable resistive layer is larger than that of the second variable resistive layer.
9. The nonvolatile memory device according to claim 1 , further comprising a controller, wherein
the controller allows a positive reset voltage with respect to the second wiring to be applied to the first wiring during a reset operation switching a resistance state from a low-resistance state to a high-resistance state.
10. The nonvolatile memory device according to claim 1 , wherein
the second wiring is made of a material selected from a group consisting of tungsten, nickel, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride.
11. The nonvolatile memory device according to claim 1 , wherein the first variable resistive layer is any one of a silicon oxide film, an aluminum oxide film, a HfO 2 film, a silicon nitride film or an aluminum nitride film, or a stack of a SiO x film and a HfO x film.
12. The nonvolatile memory device according to claim 1 , wherein
the first variable resistive layer is disposed along a side surface of the first wiring, and
the first variable resistive layer is disposed even between the interlayer insulating film and the first wiring.
13. The nonvolatile memory device according to claim 1 , wherein
the second variable resistive layer is not disposed between the interlayer insulating film and the first wiring.
14. The nonvolatile memory device according to claim 1 , further comprising:
a plurality of channel semiconductor layers that is provided at end portions of the first wirings;
a plurality of select transistors that includes a gate electrode, the gate electrode being provided on a side surface of the channel semiconductor layer with a gate insulating film therebetween, the side surface of the channel semiconductor layer facing the first direction;
a plurality of third wirings that connects the gate electrodes of the select transistors arranged in the second direction; and
a plurality of fourth wirings that is connected to other end portions of the channel semiconductor layers arranged in the first direction, the fourth wirings being provided at a predetermined interval along the second direction.
15. A nonvolatile memory device comprising:
a plurality of first wirings configured to be arranged in a first direction and a second direction intersecting with each other, and extended in a third direction perpendicular to the first direction and the second direction;
second wiring stacks configured to include second wirings and interlayer insulating films which are extended and alternately stacked in the third direction; and
memory cells configured to be disposed at positions between the first wirings and the second wirings where the first wirings and the second wirings intersect, wherein
the memory cell includes, in the first direction, a first variable resistive layer which is disposed on a side near the first wiring and a second variable resistive layer which is disposed on a side near the second wiring,
the second variable resistive layer is disposed between the interlayer insulating films in the third direction, and
the second variable resistive layer is made of an oxide of a material constituting the second wiring, and
an oxygen deficiency of the first variable resistive layer is larger than that of the second variable resistive layer.
16. The nonvolatile memory device according to claim 15 , wherein
the second wiring is made of Al, Ta, or Ni.
17. The nonvolatile memory device according to claim 16 , wherein
the second variable resistive layer is made of Al 2 O 3 , Ta 2 O 5 , or NiO.
18. The nonvolatile memory device according to claim 15 , wherein
a film thickness of the first variable resistive layer is thicker than that of the second variable resistive layer.
19. The nonvolatile memory device according to claim 15 , further comprising a controller, wherein
the controller allows a positive reset voltage with respect to the first wiring to be applied to the second wiring during a reset operation switching a resistance state from a low-resistance state to a high-resistance state.
20. The nonvolatile memory device according to claim 15 , wherein
resistivity of the first variable resistive layer is smaller than that of the second variable resistive layer.
21. The nonvolatile memory device according to claim 15 , wherein
a band gap of the first variable resistive layer is smaller than that of the second variable resistive layer.