Metallization having high power compatibility and high electrical conductivity
A metallization, for carrying current in an electrical component, includes a bottom layer overlying a substrate surface and includes titanium (Ti) or a titanium compound as main constituent. An upper layer overlies the bottom layer and includes copper (Cu) as main constituent. The bottom layer and the upper layer form a base layer. A top layer is in direct contact with the upper layer and includes aluminum (Al) as main constituent. The base layer further includes a middle layer, consisting of silver, that is arranged between the bottom layer and the upper layer.
1. A metallization for carrying current in an electrical component, the metallization comprising:
a bottom layer overlying a substrate surface and comprising titanium (Ti) or a titanium compound as main constituent;
an upper layer overlying the bottom layer and comprising copper (Cu) as main constituent, wherein the bottom layer and the upper layer form a base layer; and
a top layer in direct contact with the upper layer and comprising aluminum (Al) as main constituent, wherein the base layer further comprises a middle layer that is arranged between the bottom layer and the upper layer, and wherein the middle layer comprises silver (Ag).
2. The metallization according to claim 1 , wherein the bottom layer is thinner than the upper layer.
3. The metallization according to claim 1 , wherein the upper layer is thinner than the top layer.
4. The metallization according to claim 1 , wherein the middle layer is thinner than the bottom layer or thinner than the upper layer.
5. The metallization according to claim 1 , wherein the bottom layer has a thickness between 2 nm and 20 nm, the middle layer has a thickness between 0.5 nm and 10 nm, and the upper layer has a thickness between 1 nm and 30 nm.
6. The metallization according to claim 1 , wherein the bottom layer comprises TiN.
7. The metallization according to claim 1 , wherein the top layer further comprises Cu, Mg, an Al—Cu alloy, an Al—Mg alloy or an Al—Cu—Mg alloy.
8. The metallization according to claim 1 , wherein the top layer has a <1 1 1> texture.
9. The metallization according to claim 1 , wherein the top layer has a twin texture or a single texture.
10. The metallization according to claim 1 , further comprising a piezoelectric layer arranged between the substrate and the bottom layer.
11. The metallization according to claim 10 , wherein the piezoelectric layer comprises LiTaO 3 or LiNbO 3 .
12. The metallization according to claim 1 , wherein the substrate is piezoelectric.
13. The metallization according to claim 12 , wherein the substrate comprises LiTaO 3 or LiNbO 3 .
14. An electrical component, comprising:
a metallization configured to carry current in the electrical component, the metallization comprising:
a bottom layer overlying a substrate surface and comprising titanium (Ti) or a titanium compound as main constituent;
an upper layer overlying the bottom layer and comprising copper (Cu) as main constituent, wherein the bottom layer and the upper layer form a base layer; and
a top layer in direct contact with the upper layer and comprising aluminum (Al) as main constituent, wherein the base layer further comprises a middle layer that is arranged between the bottom layer and the upper layer, and wherein the middle layer comprises silver (Ag).
15. The electrical component of claim 14 , wherein the electrical component is a surface acoustic wave (SAW) component.
16. The electrical component of claim 14 , wherein the electrical component is a bulk acoustic wave (BAW) component.