Radiation detector manufactured by dicing a semiconductor wafer and dicing method therefor
An embodiment relates to a group II-VI semiconductor wafer of a radiation detector, and an embodiment relates to a method for producing same. An embodiment of the present invention provides a group II-VI semiconductor of a radiation detector enabling reduction or restriction of the edge effect (or the end surface effect) and a method for producing same. An embodiment of the present invention provides a radiation detector obtained by half-cutting or full-cutting a group II-VI semiconductor wafer having a zinc blende structure in which the wafer has a {001} plane main surface, and cut planes according to the half-cutting or full-cutting have an angle θ (≠0°) relative to the slip direction of the wafer.
1. A group II-VI semiconductor wafer comprising:
a zinc blende structure in which the wafer has a {001} plane main surface, and
half-cut or full-cut planes, the cut planes having an angle θ of about 30° or about 60° relative to a slip direction of the wafer.
2. The group II-VI semiconductor wafer of claim 1
wherein the wafer is a CdTe-based compound semiconductor wafer.
3. The group II-VI semiconductor wafer of claim 1 , wherein the wafer is for use in a radiation detector of an X-ray imaging device.
4. The group II-VI semiconductor wafer of claim 2 , wherein the wafer is for use in a radiation detector of an X-ray imaging device.
5. A method for dicing a group II-VI semiconductor wafer having a zinc blende structure in which the wafer has a {001} plane main surface, comprising:
subjecting the wafer to half-cutting or full-cutting at an angle a of about 30° or 60° relative to a slip direction of the wafer.
6. The dicing method of claim 5 , wherein the group II-VI semiconductor wafer is a CdTe-based compound semiconductor wafer.