Semiconductor device
View Patent ↗To provide a semiconductor device in which external correction can be performed, the area occupied by a read circuit is reduced, and power consumption is reduced. One embodiment of the semiconductor device includes a pixel and a read circuit. The pixel includes a transistor and a display element. The read circuit includes a function selection portion and an operational amplifier. The transistor is electrically connected to the function selection portion through a wiring. The operational amplifier is electrically connected to the function selection portion. The function selection portion includes at least one switch. The function selection portion can select a function of the read circuit by controlling the switch.
1. A semiconductor device comprising:
a first wiring;
a second wiring;
a third wiring;
a first switch;
a second switch;
a third switch;
a fourth switch; and
an operational amplifier,
wherein the first switch is electrically connected between the first wiring and a non-inverting input terminal of the operational amplifier,
wherein the second switch is electrically connected between the second wiring and an output terminal of the operational amplifier,
wherein the third switch is electrically connected between the third wiring and the output terminal of the operational amplifier,
wherein the fourth switch is electrically connected between the second wiring and the non-inverting input terminal of the operational amplifier,
wherein an inverting input terminal of the operational amplifier is electrically connected to the output terminal of the operational amplifier, and
wherein the second switch is configured to control supplying the second wiring with an output of the operational amplifier.
2. The semiconductor device according to claim 1 further comprising a pixel including a transistor and a display element, wherein the pixel is electrically connected to the second wiring.
3. The semiconductor device according to claim 1 further comprising:
a fourth wiring;
a fifth switch;
a sixth switch;
a seventh switch; and
a capacitor,
wherein the fifth switch is electrically connected between the output terminal of the operational amplifier and the inverting input terminal of the operational amplifier,
wherein the sixth switch is electrically connected between one of electrodes of the capacitor and the output terminal of the operational amplifier,
wherein the seventh switch is electrically connected between the fourth wiring and the inverting input terminal of the operational amplifier, and
wherein the other of the electrodes of the capacitor is electrically connected to the inverting input terminal of the operational amplifier.
4. The semiconductor device according to claim 3 further comprising:
an eighth switch,
wherein the eighth switch is electrically connected between the second wiring and the inverting input terminal of the operational amplifier.
5. The semiconductor device according to claim 3 , wherein the capacitor is replaced with a resistor.
6. The semiconductor device according to claim 1 further comprising:
a fifth switch;
a sixth switch; and
a capacitor,
wherein the fifth switch is electrically connected between the second wiring and the inverting input terminal of the operational amplifier,
wherein the sixth switch is electrically connected between the inverting input terminal of the operational amplifier and the output terminal of the operational amplifier, and
wherein the capacitor is electrically connected between the inverting input terminal of the operational amplifier and the output terminal of the operational amplifier.
7. The semiconductor device according to claim 6 , wherein the capacitor is replaced with a resistor.
8. A semiconductor device comprising:
a first wiring;
a second wiring;
a first switch;
a second switch;
a third switch;
a fourth switch;
an operational amplifier; and
a capacitor,
wherein the first switch is electrically connected between an inverting input terminal of the operational amplifier and an output terminal of the operational amplifier,
wherein the second switch is electrically connected between the first wiring and the output terminal of the operational amplifier,
wherein the third switch is electrically connected between the second wiring and the output terminal of the operational amplifier,
wherein the fourth switch is electrically connected between the first wiring and the inverting input terminal of the operational amplifier,
wherein the capacitor is electrically connected between the inverting input terminal of the operational amplifier and the output terminal of the operational amplifier, and
wherein the second switch is configured to control supplying the first wiring with an output of the operational amplifier.
9. The semiconductor device according to claim 8 further comprising a pixel including a transistor and a display element, wherein the pixel is electrically connected to the first wiring.
10. The semiconductor device according to claim 8 , wherein the capacitor is replaced with a resistor.
11. A semiconductor device comprising:
a first wiring;
a second wiring;
a third wiring;
a first switch;
a second switch;
a third switch;
a fourth switch;
an operational amplifier; and
a pixel including a transistor and a light-emitting element,
wherein the first switch is electrically connected between the first wiring and a non-inverting input terminal of the operational amplifier,
wherein the second switch is electrically connected between the second wiring and an output terminal of the operational amplifier,
wherein the third switch is electrically connected between the third wiring and the output terminal of the operational amplifier,
wherein the fourth switch is electrically connected between the second wiring and the non-inverting input terminal of the operational amplifier,
wherein an inverting input terminal of the operational amplifier is electrically connected to the output terminal of the operational amplifier,
wherein the transistor is electrically connected to the light-emitting element, and
wherein the transistor is electrically connected to the second wiring.
12. The semiconductor device according to claim 11 further comprising:
a fourth wiring;
a fifth switch;
a sixth switch;
a seventh switch; and
a capacitor,
wherein the fifth switch is electrically connected between the output terminal of the operational amplifier and the inverting input terminal of the operational amplifier,
wherein the sixth switch is electrically connected between one of electrodes of the capacitor and the output terminal of the operational amplifier,
wherein the seventh switch is electrically connected between the fourth wiring and the inverting input terminal of the operational amplifier, and
wherein the other of the electrodes of the capacitor is electrically connected to the inverting input terminal of the operational amplifier.
13. The semiconductor device according to claim 12 further comprising:
an eighth switch,
wherein the eighth switch is electrically connected between the second wiring and the inverting input terminal of the operational amplifier.
14. The semiconductor device according to claim 12 , wherein the capacitor is replaced with a resistor.
15. The semiconductor device according to claim 11 further comprising:
a fifth switch;
a sixth switch; and
a capacitor,
wherein the fifth switch is electrically connected between the second wiring and the inverting input terminal of the operational amplifier,
wherein the sixth switch is electrically connected between the inverting input terminal of the operational amplifier and the output terminal of the operational amplifier, and
wherein the capacitor is electrically connected between the inverting input terminal of the operational amplifier and the output terminal of the operational amplifier.
16. The semiconductor device according to claim 15 , wherein the capacitor is replaced with a resistor.