Semiconductor device and method of manufacturing the same
A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.
1. A semiconductor device, comprising:
a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film;
a first conductive body facing the stacked body to extend in a stacking direction;
a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films,
the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films; and
a second insulating film configured from a material different from that of the first insulating film, disposed on the one of the first conductive films of the stacked body, and disposed in the same layer as the projecting part of the first conductive body.
2. The semiconductor device according to claim 1 ,
further comprising:
a third insulating film configured from the same material as the first insulating film, and disposed in a more upper layer than the second insulating film and the projecting part.
3. The semiconductor device according to claim 1 , further comprising:
a second conductive film extending in the stacking direction; and
a plurality of memory cells disposed at intersections of the first conductive films and the second conductive film.
4. The semiconductor device according to claim 1 , wherein
the first conductive body contacts the first conductive film disposed in an uppermost layer at a certain position when viewed from the stacking direction.
5. The semiconductor device according to claim 1 , further comprising
a second conductive body disposed between a semiconductor substrate and the first conductive films in the stacking direction, wherein
the first conductive body contacts an upper surface of the second conductive body at a bottom surface of the first conductive body.
6. The semiconductor device according to claim 1 , further comprising
a plurality of the first conductive bodies, wherein
a certain first conductive body and another first conductive body contact a different first conductive film.
7. The semiconductor device according to claim 6 , wherein
the first conductive films are formed in a stepped shape in which an end of each first conductive film configures one step, and
the first conductive bodies contact the ends of the first conductive films formed in the stepped shape.
8. The semiconductor device according to claim 6 , wherein
the first conductive bodies have a bottom surface in the same position in the stacking direction.
9. The semiconductor device according to claim 1 , wherein
the first conductive body has the projecting part on both side surfaces facing in a direction intersecting the stacking direction.
10. The semiconductor device according to claim 1 , wherein
the first conductive body has the projecting part only on one of side surfaces facing in a direction intersecting the stacking direction.
11. The semiconductor device according to claim 1 , wherein
the projecting part of the first conductive body contacts an upper surface of one of the first insulating films at a side surface facing in the stacking direction of the projecting part.