Method for forming a metal contact on a surface of a semiconductor, and device with a metal contact
A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact ( 60 ) on a surface ( 11 ) of a semiconductor ( 10 ) and has the steps of: applying a metal layer ( 20 ) of palladium onto the semiconductor surface ( 11 ), applying a mask ( 40, 50 ) onto the metal layer ( 20 ), and structuring the palladium of the metal layer ( 20 ) using the mask ( 40, 50 ), wherein lateral deposits ( 21 ) of the metal are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits ( 21 ) and the structured metal layer ( 20 ′) after the structuring. Since the mask is conductive, it can remain embedded in the metal. The deposits and the mask form a part of the contact.
1. A method for forming at least one metal contact ( 60 ) on a surface ( 11 ) of a semiconductor ( 10 ) made of gallium nitride, comprising the steps of:
applying a metal layer ( 20 ) of palladium onto the semiconductor surface ( 11 ),
applying a mask ( 40 , 50 ) onto the metal layer ( 20 ), and
structuring at least the metal layer ( 20 ) using the mask ( 40 , 50 ), wherein lateral deposits ( 21 ) of the metal of the metal layer are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits ( 21 ) and the structured metal layer ( 20 ′) after the structuring,
characterized in that
the mask is a conductive hard mask, wherein the structuring also structures the semiconductor ( 10 ) and comprises the following steps: sputter etching the metal layer ( 20 ) with argon, and plasma etching the semiconductor ( 10 ) with chlorine.
2. The method according to claim 1 , wherein the mask includes at least one conductive material ( 50 ) different from the metal layer, and wherein the at least one conductive material ( 50 ) forms a lowermost layer of the hard mask and the hard mask further includes a layer ( 40 ) made of the metal layer of palladium which is arranged on the at least one conductive material ( 50 ).
3. The method according to claim 2 , wherein the conductive material ( 40 ) includes titanium, nickel or chromium.
4. The method according to claim 1 , wherein the semiconductor ( 10 ) is epitaxial.
5. The method according to claim 1 , wherein the metal contact ( 60 ) is a part of a ridge waveguide.
6. The method according to claim 1 , wherein the metal contact ( 60 ) is a mesa structure on a p-side of a micro-pixel LED or a nano-pixel LED.
7. A device with at least one metal contact ( 60 ) on a surface ( 11 ) of a structured gallium nitride semiconductor ( 10 ), wherein the metal contact comprises a conductive hard mask material on a correspondingly structured palladium layer ( 20 ′) and the conductive hard mask material is between the structured palladium layer and between palladium deposits ( 21 ) that are on the sidewalls of the conductive hard mask material, wherein no surface section of the metal contact ( 60 ) is concave.
8. A device according to claim 7 , wherein all surface sections are flat.