IP Library Granted Patent US 9,818,889
Granted Patent B2
US 9,818,889 · App. 14/107,489 · Granted Nov 14, 2017

Composition for solar cell electrodes and electrode fabricated using the same

Inventors: Sang Hee Park (Uiwang-si, KR); Tae Joon Kim (Uiwang-si, KR); Hun Gyu Song (Uiwang-si, KR)
Assignee: Cheil Industrial, Inc.
H01L31/022425C03C8/18C03C8/22H01B1/16Y02E10/50
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Quick Facts
Patent No.
US 9,818,889
App. No.
14/107,489
Granted
Nov 14, 2017
Kind
B2
Abstract

A composition for solar cell electrodes, a solar cell electrode prepared from the composition, a solar cell, and a method of manufacturing the same, the composition including silver powder; silver iodide; glass frit; and an organic vehicle, wherein the silver iodide is present in an amount of about 0.1 wt % to about 30 wt %, based on a total weight of the composition.

Claims (22)

1. A composition for solar cell electrodes, the composition comprising:

silver powder;

silver iodide;

glass frit, the glass frit including a first glass frit having a glass transition point ranging from 200° C. to 350° C. and a second glass fit having a glass transition point of more than 350° C. and less than or equal to 550° C., a weight ratio of the first glass frit to the second glass fit ranging from about 1:0.2 to about 1:1; and

an organic vehicle, wherein:

the silver iodide is present in an amount of about 0.5 wt % to about 10 wt %, based on a total weight of the composition.

2. The composition as claimed in claim 1 , wherein the composition includes:

about 60 wt % to about 95 wt % of the silver powder,

the about 0.5 wt % to about 10 wt % of the silver iodide,

about 0.5 wt % to about 20 wt % of the glass fit, and

about 1 wt % to about 30 wt % of the organic vehicle.

3. The composition as claimed in claim 1 , wherein the glass frit includes one or more of zinc oxide-silicon oxide (ZnO—SiO 2 ), zinc oxide-boron oxide-silicon oxide (ZnO—B 2 O 3 —SiO 2 ), zinc oxide-boron oxide-silicon oxide-aluminum oxide (ZnO— B 2 O 3 —SiO 2 —Al 2 O 3 ), bismuth oxide (Bi 2 O 3 ), bismuth oxide-silicon oxide (Bi 2 O 3 —SiO 2 ), bismuth oxide-boron oxide-silicon oxide (Bi 2 O 3 —B 2 O 3 —SiO 2 ), bismuth oxide-boron oxide-silicon oxide-aluminum oxide (Bi 2 O 3 —B 2 O 3 —SiO 2 —Al 2 O 3 ), bismuth oxide-zinc oxide-boron oxide-silicon oxide (Bi 2 O 3 —ZnO—B 2 O 3 —SiO 2 ), bismuth oxide-zinc oxide-boron oxide-silicon oxide-aluminum oxide (Bi 2 O 3 —ZnO—B 2 O 3 —SiO 2 —Al 2 O 3 ), lead oxide (PbO), lead oxide-tellurium oxide (PbO—TeO 2 ), lead oxide-tellurium oxide-silicon oxide (PbO—TeO 2 —SiO 2 ), lead oxide-tellurium oxide-lithium oxide (PbO—TeO 2 —Li 2 O), bismuth oxide-tellurium oxide (Bi 2 O 3 —TeO 2 ), bismuth oxide-tellurium oxide-silicon oxide (Bi 2 O 3 —TeO 2 —SiO 2 ), bismuth oxide-tellurium oxide-lithium oxide (Bi 2 O 3 —TeO 2 —Li 2 O), tellurium oxide (TeO 2 ), or tellurium oxide-zinc oxide (TeO 2 —ZnO) glass frits.

4. The composition as claimed in claim 1 , wherein the glass fit has an average particle diameter D50 of about 0.1 μm to about 10 μm.

5. The composition as claimed in claim 1 , further comprising one or more of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an anti-foaming agent, a pigment, a UV stabilizer, an antioxidant, or a coupling agent.

6. A solar cell electrode prepared from the composition for solar cell electrodes as claimed in claim 1 .

7. A method of manufacturing a solar cell, the method comprising forming an electrode on a semiconductor substrate, forming the electrode including:

applying the composition as claimed in claim 1 on the substrate,

patterning the applied composition, and

baking the semiconductor substrate having the patterned composition thereon.

8. A solar cell manufactured according to the method as claimed in claim 7 .

9. A solar cell having an electrode, the electrode being manufactured using the composition as claimed in claim 1 .

10. The composition as claimed in claim 1 , wherein the composition has a baking temperature of 400° C. to 950° C.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2021
From: SAMSUNG SDI CO., LTD.
To: CHANGZHOU FUSION NEW MATERIAL CO. LTD
Reel/Frame 056005/0177 →
MERGER AND CHANGE OF NAME Recorded Dec 29, 2020
From: CHEIL INDUSTRIES, INC.; SAMSUNG SDI CO., LTD.
To: SAMSUNG SDI CO., LTD.
Reel/Frame 054866/0956 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 16, 2013
From: PARK, SANG HEE; KIM, TAE JOON; SONG, HUN GYU
To: CHEIL INDUSTRIES, INC.
Reel/Frame 031790/0427 →
Priority Claims (1)
KR 10-2012-0157693 · Dec 29, 2012 · national
Continuity (1)
Related Publication 20140182672A1 · Jul 3, 2014