Semiconductor light-emitting device
A semiconductor light-emitting device including a light-emitting layer, a first N-type waveguide layer and a plurality of semiconductor layers is provided. The light light-emitting layer has a first side and a second side opposite to the first side. The first N-type waveguide layer is disposed at the first side, and the semiconductor layers are disposed at the second side. The semiconductor layers include at least one P-type semiconductor layer and a plurality of N-type semiconductor layers, and a quantity of the N-type semiconductor layers is more than a quantity of the at least one P-type semiconductor layer.
1. A semiconductor light-emitting device, comprising:
a light-emitting layer, having a first side and a second side opposite to the first side;
a first N-type waveguide layer, disposed at the first side; and
a plurality of semiconductor layers, disposed at the second side, wherein the semiconductor layers comprise at least one P-type semiconductor layer and a plurality of N-type semiconductor layers, and a quantity of the N-type semiconductor layers is more than a quantity of the at least one P-type semiconductor layer,
wherein the at least one P-type semiconductor layer comprises a P-type waveguide layer, the N-type semiconductor layers comprise a second N-type waveguide layer disposed at a side of the P-type waveguide layer.
2. The semiconductor light-emitting device according to claim 1 , wherein a tunnelling junction is formed between the P-type waveguide layer and the second N-type waveguide layer.
3. The semiconductor light-emitting device according to claim 1 , wherein the P-type waveguide layer is doped with a P-type dopant of a concentration in a range of 10 18 atoms/cm 3 to 10 20 atoms/cm 3 , and the second N-type waveguide layer is doped with a N-type dopant of a concentration in a range of 10 18 atoms/cm 3 to 10 20 atoms/cm 3 .
4. The semiconductor light-emitting device according to claim 1 , wherein the semiconductor layers further comprise an unintentionally doped waveguide layer disposed between the P-type waveguide layer and the light-emitting layer.
5. The semiconductor light-emitting device according to claim 1 , further comprising a first N-type semiconductor material layer and a first N-type semiconductor cladding layer, the first N-type semiconductor material layer and the first N-type semiconductor cladding layer are disposed at the first side, wherein the first N-type semiconductor cladding layer is disposed between the first N-type semiconductor material layer and the first N-type waveguide layer, and the first N-type waveguide layer is disposed between the first N-type semiconductor cladding layer and the light-emitting layer.
6. The semiconductor light-emitting device according to claim 1 , wherein the N-type semiconductor layers comprise a second N-type semiconductor material layer and a second N-type semiconductor cladding layer, the second N-type semiconductor cladding layer is disposed between the second N-type semiconductor material layer and the second N-type waveguide layer, and the second N-type waveguide layer is disposed between the second N-type semiconductor cladding layer and the light-emitting layer.
7. The semiconductor light-emitting device according to claim 6 , wherein the N-type semiconductor layers further comprise an electron blocking layer disposed between the second N-type semiconductor cladding layer and the second N-type waveguide layer, wherein a band-gap of the electron blocking layer is larger than a band-gap of the light-emitting layer.
8. The semiconductor light-emitting device according to claim 6 , further comprising a semiconductor contact layer, wherein the second N-type semiconductor material layer is disposed between the semiconductor contact layer and the second N-type semiconductor cladding layer.
9. The semiconductor light-emitting device according to claim 8 , wherein the semiconductor contact layer is N-type doped with a doping concentration in a range of 10 19 atoms/cm 3 to 10 21 atoms/cm 3 .
10. The semiconductor light-emitting device according to claim 1 , wherein a quantity of the at least one P-type semiconductor layer is one.