Method for producing a strained semiconductor on insulator substrate

1. A method comprising, from a strained semi-conductor on insulator type substrate provided with a supporting layer, an insulating layer provided on the supporting layer, and a superficial layer based on a strained crystalline semi-conductor material provided on and in contact with said insulating layer:

amorphizing at least one exposed region of said strained semi-conductor material of the superficial layer while keeping a crystalline structure of at least one area of the superficial layer of the strained semi-conductor material adjoining said at least one exposed region, said amorphized at least one exposed region having a thickness equal to a thickness of the superficial layer;

partially recrystallizing said amorphized at least one exposed region by using at least one lateral face of said at least one area of the superficial layer having the crystalline structure in contact with said amorphized at least one exposed region as a starting area of a recrystallization front, said amorphized at least one exposed region not being covered with any other material or, after the amorphizing, being covered and in contact with a material from which the recrystallization front cannot be generated,

forming, after said recrystallizing, a transistor having a channel in the recrystallized at least one region.

2. The method according to claim 1 , wherein the amorphizing is performed using an ion beam through an aperture in a masking formed on the superficial layer having the crystalline structure, the aperture of the masking exposing said at least one exposed region.

3. The method according to claim 1 , wherein the strained crystalline semi-conductor material is tensile strained silicon.

4. The method according to claim 3 , further comprising, after the at least partially recrystallizing, enriching said at least one exposed region with Germanium.

5. A method for producing a microelectronic device with transistors, comprising performing the method according to claim 4 , and further comprising, after the at least partially recrystallizing, producing at least one P-type transistor and at least one N-type transistor, said at least one exposed region for forming a channel region for said P transistor, said at least one area for forming a channel region for said N transistor.

6. The method according to claim 1 , wherein said strained crystalline semi-conductor material is compressive strained silicon germanium.

7. The method according to claim 6 , wherein the compressive strained silicon germanium is obtained prior to the amorphizing by enriching a Si layer lying on said insulating layer with Ge.

8. A method for producing a microelectronic device according to claim 6 , further comprising, after the at least partially recrystallizing, producing at least one N-type transistor and at least one P-type transistor, said at least one exposed region for forming a channel region for said N transistor, said at least one area for forming a channel region for said P transistor.

9. The method according to claim 1 , wherein the amorphizing and the at least partially recrystallizing are performed using a laser.

10. The method according to claim 1 , wherein the at least partially recrystallizing comprises at least one thermal annealing.

11. The method according to claim 10 , wherein the at least partially recrystallizing is a partial recrystallization of said at least one exposed region so as to keep at an end of the at least partially recrystallizing, an amorphous portion in said at least one exposed region.

12. The method according to claim 1 , comprising said material from which the recrystallization front cannot be generated, and wherein said amorphized at least one exposed region and said at least partially recrystallized region include another lateral face adjoining said at least one area of said superficial layer having the crystalline structure, other lateral faces of the amorphized at least one exposed region being in contact with the material from which the recrystallization front cannot be generated.

13. The method according to claim 1 , wherein said amorphized at least one exposed region comprises a region relaxed from mechanical strains induced by vertical recrystallization.

14. A method for producing a semi-conducting portion having uni-axial strain, comprising:

providing a strained semi-conductor on insulator type substrate comprising a supporting layer, an insulating layer provided on the supporting layer, and a semi-conducting superficial layer having a thickness based on a crystalline strained semi-conductor material provided on and in contact with the insulating layer, a semi-conducting portion of the superficial layer being surrounded and in contact with insulating areas;

amorphizing at least one exposed region of a portion of the crystalline strained semi-conductor material while keeping a crystalline structure of at least one area of said portion adjoining said at least one exposed region, said amorphized at least one exposed region having a thickness equal to a thickness of the superficial layer, said at least one area having a critical dimension lower than 6 times the thickness of the superficial layer;

recrystallizing said amorphized at least one exposed region by using at least one lateral face of said at least one area in contact with said region as a starting zone of a recrystallization front, said amorphized at least one exposed region not being covered with any other material or, after the amorphizing, being covered and in contact with a material from which the recrystallization front cannot be generated, and

forming, after said recrystallizing, a transistor having a channel in the recrystallized at least one region.

15. The method according to claim 14 , wherein the amorphizing is performed using an ion beam through an aperture in a masking formed on the semi-conducting superficial layer, the aperture of the masking exposing said at least one exposed region.

16. The method according to claim 14 , wherein the crystalline strained semi-conductor material is a tensile strained silicon.

17. The method according to claim 14 , wherein the crystalline strained semi-conductor material is compressive strained silicon germanium.

18. A method for producing a microelectronic device with transistors, comprising performing the method according to claim 14 , and further comprising, after the at least partially recrystallizing, producing at least one P-type transistor or at least one N-type transistor, said portion for forming a channel region for said P-type transistor or for said N-type transistor.

19. The method according to claim 14 , wherein said amorphized at least one exposed region comprises a region relaxed from mechanical strains induced by vertical recrystallization.

20. A method comprising, from a strained semi-conductor on insulator type substrate provided with a supporting layer, an insulating layer provided on the supporting layer, and a superficial layer based on a strained crystalline semi-conductor material provided on and in contact with said insulating layer:

amorphizing at least one region of said strained semi-conductor material of the superficial layer while keeping a crystalline structure of at least one area of the superficial layer of the strained semi-conductor material adjoining said at least one region, said amorphized at least one region having a thickness equal to a thickness of the superficial layer;

recrystallizing said amorphized at least one region by using at least one lateral face of said at least one area of the superficial layer having the crystalline structure in contact with said amorphized at least one region as a starting area of a recrystallization front, said amorphized at least one region not being covered with any other material or, after the amorphizing, being covered and in contact with a material from which the recrystallization front cannot be generated,

wherein consequently to said amorphizing and said recrystallizing, said at least one region is relaxed; and

forming, after said recrystallizing, at least a transistor gate on said recrystallized at least one region.

21. The method according to claim 20 , further comprising, after said recrystallizing and prior to the forming of said transistor gate, enriching said at least one region with germanium.

22. The method according to claim 20 , wherein said amorphized at least one exposed region comprises a region relaxed from mechanical strains induced by vertical recrystallization.