IP Library Granted Patent US 9,901,009
Granted Patent B2
US 9,901,009 · App. 14/852,228 · Granted Feb 20, 2018

Semiconductor memory device

Inventors: Masato Sugita (Yokohama Kanagawa, JP); Masayasu Kawase (Yokohama Kanagawa, JP)
Assignee: Toshiba Memory Corporation
H05K7/205G06F1/20H05K7/20454
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Quick Facts
Patent No.
US 9,901,009
App. No.
14/852,228
Granted
Feb 20, 2018
Kind
B2
Abstract

According to one embodiment, a semiconductor memory device includes a case, a first substrate, an element, and a first heat conduction member. The first substrate is provided in the case and includes a first face. The element is provided on the first face. The first heat conduction member is disposed at least between the element and the case. The element includes a second substrate, a control unit, and a storage unit. The second substrate includes a second face attached to the first face and a third face located opposite to the second face. The control unit and the storage unit are provided on the third face. The first heat conduction member covers the third face and the control unit and is disposed in a state in which the first heat conduction member is held between and compressed by the third face, the control unit, and the case.

Claims (36)

1. A semiconductor memory device comprising:

a case;

a first substrate provided in the case and including a first face;

an element provided on the first face; and

a first heat conduction member disposed between the element and the case,

wherein the element includes a second substrate, a control unit, and a storage unit,

the second substrate includes a second face attached to the first face and a third face opposite to the second face,

the control unit and the storage unit are provided on the third face,

the first heat conduction member covers the control unit and is disposed in a state in which the first heat conduction member is held between and compressed by the control unit and the case,

the first heat conduction member is in contact with a part of the third face, and

a first width is greater than a second width, the first width representing a width of the first heat conduction member in a first direction along the first face at a first position in contact with the case, the second width representing a width of the first heat conduction member in the first direction at a second position farther away from the case than the first position.

2. The semiconductor memory device according to claim 1 , wherein the first heat conduction member covers the third face, the control unit, and the storage unit and is disposed in a state in which the first heat conduction member is held between and compressed by the third face, the control unit, the storage unit, and the case.

3. The semiconductor memory device according to claim 1 , wherein the first heat conduction member covers the first face, the third face, and the control unit and is disposed in a state in which the first heat conduction member is held between and compressed by the first face, the third face, the control unit, and the case.

4. The semiconductor memory device according to claim 1 , wherein

a dimension of the first heat conduction member in a thickness direction, while being placed in a free state, is greater than the dimension while being held among the third face, the control unit, and the case.

5. The semiconductor memory device according to claim 1 , wherein the first heat conduction member has an adhesive force to attach to at least either the control unit or the case.

6. The semiconductor memory device according to claim 1 , wherein the first heat conduction member includes an electrically insulating magnetic material.

7. The semiconductor memory device according to claim 1 , wherein

the element is thermally connected to the case through a second heat conduction member,

the case includes a first wall and a second wall, the first wall being in contact with the first heat conduction member, the second wall being located opposite to the first wall with respect to the first substrate, and

the second heat conduction member penetrates through the first substrate.

8. The semiconductor memory device according to claim 7 , wherein the second heat conduction member penetrates through the first substrate in a state in which the second heat conduction member is not in contact with the first substrate.

9. The semiconductor memory device according to claim 7 , wherein a dimension of the second heat conduction member in a thickness direction, while being placed in a free state, is greater than the dimension while being held among the element and the case.

10. The semiconductor memory device according to claim 7 , wherein the second heat conduction member has an adhesive force to attach to at least either one of the element and the case.

11. The semiconductor memory device according to claim 7 , wherein the second heat conduction member is metal.

12. A semiconductor memory device comprising:

a case;

a first substrate which is provided in the case and which includes a first face;

a first element provided on the first face; and

a first heat conduction member disposed between the first element and the case,

wherein the first element includes a control unit, and

the second substrate includes a second face attached to the first face and a third face opposite to the second face,

the control unit is provided on the third face of the second substrate;

the first heat conduction member covers the control unit and is disposed in a state in which the first heat conduction member is held among the third face, the control unit, and the case and is in thermally close contact with the third face, the control unit, and the case,

the first heat conduction member is in contact with a part of the third face, and

a first width is greater than a second width, the first width representing a width of the first heat conduction member in a first direction along the first face at a first position in contact with the case, the second width representing a width of the first heat conduction member in the first direction at a second position farther away from the case than the first position.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043066/0329 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 21, 2015
From: SUGITA, MASATO; KAWASE, MASAYASU
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 036842/0577 →
Continuity (2)
Provisional Application 62131210 · Mar 10, 2015
Related Publication 20160270251A1 · Sep 15, 2016