Switchable filters and design structures
Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.
1. A method comprising:
forming at least one filter comprising a plurality of electrodes on a piezoelectric substrate; and
forming a beam structure positioned over the least one filter and structured to short the least one filter structure, upon actuation.
2. The method of claim 1 , wherein the beam structure is a MEMS cantilever beam, positioned perpendicular to the plurality of electrodes and, structure, upon activation, to contact the plurality of electrodes.
3. The method of claim 1 , wherein the beam structure is positioned over a ground electrode and a signal electrode of a Vin IDT.
4. The method of claim 1 , wherein the beam structure is positioned over ground electrodes of a Vin IDT and a Vout IDT of the at least one filter.
5. The method of claim 1 , wherein the beam structure is a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter by contacting at least one of the plurality of electrodes.
6. The method of claim 1 , wherein the at least one filter is a piezoelectric structure.
7. The method of claim 6 , wherein the piezoelectric structure is a surface acoustic wave (SAW) filter.
8. The method of claim 7 , wherein forming the SAW filter comprises:
forming a Vin interdigital transducer (IDT) comprising interleaved signal and ground electrodes on a surface of the piezoelectric substrate; and
forming a Vout IDT comprising interleaved signal and ground electrodes on the surface of the piezoelectric substrate.
9. The method of claim 8 , wherein the beam structure is a MEMS beam which is positioned to short the interleaved signal and ground electrodes of the Vin IDT or Vout IDT, upon actuation.
10. The method of claim 1 , wherein the filter structure is a bulk acoustic wave (BAW) filter.
11. The method of claim 1 , wherein the beam structure is a composite MEMS beam structure of metal and insulator material over the plurality of electrodes.
12. The method of claim 1 , wherein beam structure is a cantilever MEMS beam, positioned between actuators and perpendicular to interleaved electrodes of the at least one filter.