Contact wrap around structure
A semiconductor device includes a gate stack. The semiconductor device also includes a wrap-around contact arranged around and contacting substantially all surface area of a regrown source/drain region of the semiconductor device proximate to the gate stack.
1. A semiconductor device, comprising:
a gate stack;
a gate spacer on sidewalls of the gate stack;
a fin spacer on sidewalls of the gate spacer;
a pre-metal dielectric on the fin spacer; and
a wrap-around non-silicide contact on the gate spacer, the fin spacer, and the pre-metal dielectric, the wrap-around non-silicide contact extending around and contacting substantially all surface area of a regrown source/drain region of a fin supported by a base fin-portion extending from a first surface to an opposing second surface of an isolation region of the semiconductor device proximate to the gate stack, the regrown source/drain region of the fin having substantially parallel sidewalls, a fin width of the base-fin portion being substantially equal to a fin width of a widest portion of the regrown source/drain region of the fin.
2. The semiconductor device of claim 1 , in which the semiconductor device comprises a fin field-effect transistor (FinFET).
3. The semiconductor device of claim 2 , in which the gate stack is on a surface of the base fin-portion.
4. The semiconductor device of claim 3 , in which the base fin-portion comprises silicon, germanium, or silicon germanium.
5. The semiconductor device of claim 1 , in which the wrap-around non-silicide contact comprises a metal insulator semiconductor (MIS) contact or a direct contact.
6. The semiconductor device of claim 5 , in which the wrap-around non-silicide contact comprises the MIS contact coupled to an n-type metal oxide semiconductor (NMOS) region of the semiconductor device or the wrap-around non-silicide contact comprises the direct contact coupled to a p-type metal oxide semiconductor (PMOS) region of the semiconductor device.
7. The semiconductor device of claim 6 , in which the wrap-around non-silicide contact comprises the MIS contact coupled to the NMOS region of the semiconductor device, and the MIS contact comprises:
a titanium oxide layer (TiO 2 ) on the NMOS region of the semiconductor device; and
a titanium layer (Ti) on the titanium oxide layer.
8. The semiconductor device of claim 6 , in which the wrap-around non-silicide contact comprises the direct contact coupled to the PMOS region of the semiconductor device, and the direct contact comprises a titanium layer (Ti) on the PMOS region of the semiconductor device.
9. The semiconductor device of claim 1 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
10. A semiconductor device, comprising:
a gate stack;
a gate spacer on sidewalls of the gate stack;
a fin spacer on sidewalls of the gate spacer;
a pre-metal dielectric on the fin spacer; and
means for contacting the gate spacer, the fin spacer, the pre-metal dielectric, and substantially all surface area of a regrown source/drain region of a fin supported by a base fin-portion extending from a first surface to an opposing second surface of an isolation region of the semiconductor device proximate to the gate stack, the regrown source/drain region of the fin having substantially parallel sidewalls, and a fin width of the base-fin portion being substantially equal to a fin width of a widest portion of the regrown source/drain region of the fin.
11. The semiconductor device of claim 10 , in which the semiconductor device comprises a fin field-effect transistor (FinFET).
12. The semiconductor device of claim 11 , in which the gate stack is on a surface of the base fin-portion.
13. The semiconductor device of claim 12 , in which the base fin-portion comprises silicon, germanium, or silicon germanium.
14. The semiconductor device of claim 10 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.