Electrostatic protection circuit and semiconductor integrated circuit apparatus

1. An electrostatic protection circuit that is connected to a first terminal via a first node and connected to a second terminal via a second node, and when static electricity is applied to the first terminal or the second terminal, discharges charge produced by the static electricity, the electrostatic protection circuit comprising:

a discharge circuit that is connected between the first node and the second node, and discharges the charge produced by the static electricity;

a latch circuit that is connected between the first node and the second node, and outputs a signal that controls operation of the discharge circuit to the discharge circuit;

a switch circuit that is connected to the latch circuit and changes the signal that controls operation of the discharge circuit;

a control circuit that is connected between the first node and the second node, and outputs a signal that controls operation of the switch circuit to the switch circuit;

a first impedance element connected between a third node and one out of the first and second nodes;

a first capacitor connected between the third node and another one out of the first and second nodes;

a second impedance element connected between a fourth node and the one out of the first and second nodes;

a second capacitor or a clamping circuit connected between the fourth node and the other one out of the first and second nodes;

a first transistor and a second transistor that are connected in series between a fifth node and the one out of the first and second nodes, where if the first node reaches a higher potential than the second node, the first transistor enters a conductive state in accordance with an increase in a potential difference occurring between two ends of the first impedance element, and the second transistor enters a conductive state in accordance with a potential difference occurring between two ends of the second impedance element;

a third impedance element connected between the fifth node and the other one out of the first and second nodes; and

a third transistor that is connected between the fourth node and the other one out of the first and second nodes, and, if the first node reaches a higher potential than the second node, enters a conductive state in accordance with an increase in a potential difference occurring between two ends of the third impedance element,

wherein if the first node reaches a higher potential than the second node, the discharge circuit allows current to flow from the first node to the second node in accordance with an increase in the potential difference occurring between the two ends of the second or third impedance element.

2. The electrostatic protection circuit according to claim 1 , wherein a time constant of a first series circuit constituted by the first impedance element and the first capacitor is larger than a time constant of a second series circuit constituted by the second impedance element and the second capacitor.

3. The electrostatic protection circuit according to claim 2 , wherein the time constant of the first series circuit is 200 ns or larger, and the time constant of the second series circuit is 50 ns or smaller.

4. The electrostatic protection circuit according to claim 1 , further comprising:

a detection circuit that, if the first node reaches a higher potential than the second node, activates an output signal in accordance with the potential difference occurring between the two ends of the second or third impedance element,

wherein the discharge circuit allows current to flow from the first node to the second node if the output signal of the detection circuit is activated.

5. The electrostatic protection circuit according to claim 1 , further comprising:

a fourth impedance element connected between the fifth node and a sixth node,

wherein the third impedance element is connected between the sixth node and the other one out of the first and second nodes.

6. The electrostatic protection circuit according to claim 4 , further comprising:

a fourth impedance element connected between the fifth node and a sixth node; and

a fourth transistor that is connected in parallel to the fourth impedance element, and enters a conductive state if the output signal of the detection circuit is activated,

wherein the third impedance element is connected between the sixth node and the other one out of the first and second nodes.

7. A semiconductor integrated circuit apparatus comprising an internal circuit and the electrostatic protection circuit according to claim 5 that protects the internal circuit from static electricity,

wherein a hold voltage of the electrostatic protection circuit is set to a minimum operation voltage of the internal circuit or higher.

8. A semiconductor integrated circuit apparatus comprising the electrostatic protection circuit according to claim 1 .

9. An electrostatic protection circuit that is connected to a first terminal via a first node and connected to a second terminal via a second node, and when static electricity is applied to the first terminal or the second terminal, discharges charge produced by the static electricity, the electrostatic protection circuit comprising:

a discharge circuit that is connected between the first node and the second node, and discharges the charge produced by the static electricity;

a latch circuit that is connected between the first node and the second node, and outputs a signal that controls operation of the discharge circuit to the discharge circuit;

a switch circuit that is connected to the latch circuit and changes the signal that controls operation of the discharge circuit;

a control circuit that is connected between the first node and the second node, and outputs a signal that controls operation of the switch circuit to the switch circuit;

a first capacitor connected between a third node and one out of the first and second nodes;

a first impedance element connected between the third node and another one out of the first and second nodes;

a second impedance element connected between a fourth node and the one out of the first and second nodes;

a second capacitor or a clamping circuit connected between the fourth node and the other one out of the first and second nodes;

a first transistor that is connected between a fifth node and the one out of the first and second nodes, and, if the first node reaches a higher potential than the second node, enters a conductive state in accordance with an increase in a potential difference occurring between two ends of the second impedance element;

a third impedance element connected between the fifth node and the other one out of the first and second nodes; and

a second transistor and a third transistor that are connected in series between the fourth node and the other one out of the first and second nodes, where if the first node reaches a higher potential than the second node, the second transistor enters a conductive state in accordance with an increase in a potential difference occurring between two ends of the first impedance element, and the third transistor enters a conductive state in accordance with a potential difference occurring between two ends of the third impedance element,

wherein if the first node reaches a higher potential than the second node, the discharge circuit allows current to flow from the first node to the second node in accordance with an increase in the potential difference occurring between the two ends of the second or third impedance element.

10. The electrostatic protection circuit according to claim 9 , wherein a time constant of a first series circuit constituted by the first impedance element and the first capacitor is larger than a time constant of a second series circuit constituted by the second impedance element and the second capacitor.

11. The electrostatic protection circuit according to claim 10 , wherein the time constant of the first series circuit is 200 ns or larger, and the time constant of the second series circuit is 50 ns or smaller.

12. The electrostatic protection circuit according to claim 9 , further comprising:

a detection circuit that, if the first node reaches a higher potential than the second node, activates an output signal in accordance with the potential difference occurring between the two ends of the second or third impedance element,

wherein the discharge circuit allows current to flow from the first node to the second node if the output signal of the detection circuit is activated.

13. The electrostatic protection circuit according to claim 9 , further comprising:

a fourth impedance element connected between the fifth node and a sixth node,

wherein the third impedance element is connected between the sixth node and the other one out of the first and second nodes.

14. The electrostatic protection circuit according to claim 12 , further comprising:

a fourth impedance element connected between the fifth node and a sixth node; and

a fourth transistor that is connected in parallel to the fourth impedance element, and enters a conductive state if the output signal of the detection circuit is activated,

wherein the third impedance element is connected between the sixth node and the other one out of the first and second nodes.

15. A semiconductor integrated circuit apparatus comprising an internal circuit and the electrostatic protection circuit according to claim 13 that protects the internal circuit from static electricity,

wherein a hold voltage of the electrostatic protection circuit is set to a minimum operation voltage of the internal circuit or higher.