Method and apparatus for reducing specular reflections in semiconductor lasers
View Patent ↗The present invention is directed a method of fabricating a VCSEL. First, a substrate with a back surface and a front surface is provided. Then, a first reflector, an active region, and a second reflector are disposed on the front surface. The first reflector is disposed on the front surface. The active region is interposed between the first reflector and the second reflector. Then, anti-reflection features are formed into the back surface of the substrate to reduce specular reflection of light into the active region.
1. A VCSEL comprising:
a substrate having a back surface and a front surface;
a first reflector disposed on the front surface of the substrate;
an active region disposed on the first reflector; and
a second reflector disposed on the active region such that the active region is interposed between the first reflector and the second reflector, wherein the back surface of the substrate comprises periodic row reflection means for causing a specular reflection of light impinging on said period row reflection means from the active region which specular reflection of light is directed away from said active region thereby reducing specular reflection of light into the active region.
2. The VCSEL of claim 1 , wherein the periodic row reflection means comprise rows having a triangular cross section.
3. The VCSEL of claim 1 , wherein the periodic row reflection means are etched on the back surface using a selective wet etching solution.
4. The VCSEL of claim 1 , wherein the periodic row reflection means are etched on the back surface by photoelectrochemical etching.
5. The VCSEL of claim 4 , wherein the periodic row reflection means are etched on the back surface by scanning the back surface with a line-focused laser.
6. An array of VCSELs sharing a common substrate, each VCSEL comprising:
a substrate having a back surface and a front surface;
a first reflector disposed on the front surface of the substrate;
an active region disposed on the first reflector, and
a second reflector disposed on the active region such that the active region is interposed between the first reflector and the second reflector, wherein the back surface of the substrate comprises periodic row reflection means for causing a specular reflection of light impinging on said period row reflection means from the active region which specular reflection of light is directed away from said active region thereby reducing specular reflection of light into the active region of each VCSEL.
7. The array of claim 6 , wherein the periodic row reflection means comprise rows having a triangular cross section.
8. The VCSEL of claim 2 , wherein the triangular cross section of the rows of the periodic row reflection means is such that light directed onto the period row reflection means from the active region is reflected away from the active region.
9. The VCSEL of claim 1 , wherein the periodic row reflection means comprise rows having a sinusoidal cross section.
10. The VCSEL of claim 7 , wherein the triangular cross section of the rows of the periodic row reflection means is such that light directed onto the period row reflection means from the active region is reflected away from the active region.
11. The VCSEL of claim 6 , wherein the periodic row reflection means comprise rows having a sinusoidal cross section.
12. The VCSEL of claim 6 , wherein the periodic row reflection means are etched on the back surface using a selective wet etching solution.
13. The VCSEL of claim 6 , wherein the periodic row reflection means are etched on the back surface by photoelectrochemical etching.
14. The VCSEL of claim 13 , wherein the periodic row reflection means are etched on the back surface by scanning the back surface with a line-focused laser.