IP Library Granted Patent US 6,908,689
Granted Patent B1
US 6,908,689 · App. 10/022,728 · Granted Jun 21, 2005

Ruthenium-aluminum underlayer for magnetic recording media

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Quick Facts
Patent No.
US 6,908,689
App. No.
10/022,728
Granted
Jun 21, 2005
Kind
B1
Abstract

A magnetic recording medium containing a B-2 structured ruthenium-aluminum underlayer comprising a (200) crystallographic orientation with a thickness from about 50 Å to about 800 Å, and a magnetic layer with a Co(11.0) crystallographic orientation, and a method of making the same are disclosed. The medium deposited on mechanically textured and surface-oxidized NiP film has a relatively high remanent coercivity and a relatively high signal to medium noise ratio even at low OR-Mrt.

Claims (24)

1. A magnetic recording medium, comprising:

a non-magnetic substrate; an oxidized NiP layer on the non-magnetic substrate;

a B2-structured ruthenium-aluminum-containing underlayer comprising a (200) crystallographic orientation; and

a magnetic layer comprising a Co(11.0) crystallographic orientation, wherein the non-magnetic substrate is mechanically textured and OR-Mrt of the magnetic recording medium is more than about 1.05, thereby the magnetic recording medium is an oriented medium.

2. The magnetic recording medium of claim 1 , wherein the ruthenium-aluminum-containing underlayer comprises RuAl and Ru is in a range from about 45 to about 51.5 atomic percent.

3. The magnetic recording medium of claim 1 , wherein the non-magnetic substrate is non-metallic.

4. The magnetic recording medium of claim 1 , wherein the non-magnetic substrate is an Al-alloy substrate comprising electrolessly plated NiP, wherein the surface of the NiP film is oxidized.

5. The magnetic recording medium of claim 1 , further comprising a chromium-containing second underlayer disposed between the ruthenium-aluminum-containing underlayer and the magnetic layer.

6. The magnetic recording medium of claim 3 , wherein the oxidized NiP film comprises a phosphorus content in a range of about 12 to about 50 atomic percent and an oxygen content in a range of about 0.5 to about 50 atomic percent in the top 50 Å of the oxidized NiP film.

7. The magnetic recording medium of claim 6 , wherein the oxidized NiP film has a thickness of about 50-200,000 Å.

8. The magnetic recording medium of claim 1 , wherein the magnetic layer comprises an alloy material selected from the group consisting of CoCrPtB, CoCrPtBTa, CoCrPtBTaNb, CoCrPt, CoCrNi, CoCrPtTa, CoCrPtTaNb, and CoCrTa.

9. The magnetic recording medium of claim 1 , wherein the ruthenium-aluminum-containing underlayer has a thickness of about 50-800 Å.

10. A method of making a magnetic recording medium comprising:

providing a non-magnetic substrate; depositing an oxidized NiP layer on the non-magnetic substrate;

depositing a B-2 structured ruthenium-aluminum-containing underlayer comprising a (200) crystallographic orientation on the non-magnetic substrate; and

depositing a magnetic layer comprising a Co(11.0) crystallographic orientation on the B-2 structured ruthenium-aluminum-containing underlayer, wherein the non-magnetic substrate is mechanically textured and OR-Mrt of the magnetic recording medium is more than about 1.05, thereby the magnetic recording medium is an oriented medium.

11. The method of claim 10 , wherein the ruthenium-aluminum underlayer comprises from about 45 to about 51.5 atomic percent ruthenium.

12. The method of claim 10 , further comprising depositing a chromium-containing second underlayer between the RuAl-containing underlayer and the magnetic layer.

13. The method of claim 10 , further comprising depositing a CoCr-containing intermediate layer between the RuAl-containing underlayer and the magnetic layer.

14. The method of claim 10 , wherein the magnetic layer comprises an alloy material selected from the group consisting of CoCrPtB, CoCrPtBTa, CoCrPtBTaNb, CoCrPt, CoCrNi, CoCrPtTa, CoCrPtTaNb, and CoCrTa.

15. The method of claim 10 , wherein the ruthenium-aluminum-containing underlayer has a thickness of about 50 Å to about 800 Å.

16. The method of claim 10 , wherein the oxidized NiP layer is sputter deposited.

17. The method of claim 10 , further comprising electroless plating of the non-magnetic substrate with a NiP layer, then oxidizing and mechanical texturing the surface of the NiP layer, wherein the non-magnetic substrate is an Al-alloy substrate.

18. The method of claim 16 , wherein the oxidized NiP layer comprises a phosphorous content of from about 12 at. % to about 50 at. %, and an oxygen content of from about 0.5 at. % to about 50 at. % in the top 50 Å of the oxidized NiP layer.

Assignments (3)
RELEASE OF SECURITY INTERESTS IN PATENT RIGHTS Recorded Jan 4, 2006
From: JPMORGAN CHASE BANK, N.A. (FORMERLY KNOWN AS THE CHASE MANHATTAN BANK AND JPMORGAN CHASE BANK), AS ADMINISTRATIVE AGENT
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 016967/0001 →
SECURITY AGREEMENT Recorded Aug 5, 2002
From: SEAGATE TECHNOLOGY LLC
To: JPMORGAN CHASE BANK, AS COLLATERAL AGENT
Reel/Frame 013177/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2001
From: CHEN, QIXU; WU, ZHONG; HARKNESS IV, SAMUEL D.; RANJAN, RAJIV Y.
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 012405/0588 →