IP Library › Granted Patent US 7,071,114
Granted Patent B2
US 7,071,114 · App. 10/402,949 · Granted Jul 4, 2006

Method and apparatus for dry etching

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Quick Facts
Patent No.
US 7,071,114
App. No.
10/402,949
Granted
Jul 4, 2006
Kind
B2
Abstract

A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

Claims (12)

1. A method for manufacturing a semiconductor device comprising the steps of:

providing a semiconductor body in a vacuum chamber;

supplying an etching gas to the vacuum chamber;

etching a layer of the semiconductor body to form a mask pattern; and

overetching the layer to remove residual;

wherein the effective exhaust speed of the vacuum chamber during the etching step is different from the elective exhaust speed during the overetching step by using a plurality of vacuum pumps connected to respectively different exhaust ports.

2. A method for manufacturing a semiconductor device according to claim 1 , wherein the body has one of silicon, aluminum, tungsten, tungsten-silicide, copper, GaAs, silicon nitride and titanium nitride.

3. A method for manufacturing a semiconductor device according to claim 1 , wherein the etching gas includes Cl or Br.

4. A method for manufacturing a semiconductor device comprising the steps of:

providing a semiconductor body in a vacuum chamber;

supplying an etching gas into the vacuum chamber; and

selectively etching the surface of the semiconductor body in said chamber by using plasma of said etching gas, while exhausting reaction products in said chamber by using a plurality of vacuum pumps having at least 2000 1/sec exhaust speed efficiency.