IP Library Granted Patent US 6,998,539
Granted Patent B2
US 6,998,539 · App. 10/447,169 · Granted Feb 14, 2006

Standoff/mask structure for electrical interconnect

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Quick Facts
Patent No.
US 6,998,539
App. No.
10/447,169
Granted
Feb 14, 2006
Kind
B2
Abstract

A multi-layer standoff/mask structure including a standoff having a plurality of standoff openings and a mask having a plurality of mask openings aligned with the standoff openings.

Claims (43)

1. A standoff/mask structure comprising:

a liner layer;

an adhesive standoff layer attached to the liner layer;

a plurality of standoff apertures formed in the liner layer and the adhesive standoff layer;

a mask adhesive layer attached to the liner layer;

a mask layer attached to the mask adhesive layer;

a plurality of mask apertures formed in the mask adhesive layer and the mask layer in alignment with the plurality of standoff apertures;

the adhesive standoff layer being removably attached to the liner layer such that the liner layer, the mask adhesive layer and the mask layer are removable from the adhesive standoff layer.

2. The standoff/mask structure of claim 1 wherein the standoff apertures have a diameter in the range of about 8 micrometers to about 500micrometers.

3. The standoff/mask structure of claim 1 wherein the standoff apertures have a diameter in the range of about 8 micrometers to about 500 micrometers and a center to center spacing in the range of about 1.1 times such diameter to about 2 times such diameter.

4. The standoff/mask structure of claim 1 wherein the mask apertures have a diameter in the range of about 5 micrometers to about 250 micrometers.

5. The standoff/mask structure of claim 1 wherein the adhesive standoff layer comprises an adhesive selected from a group consisting of acrylic, epoxy, phenolic, polyimide, and silicone adhesives.

6. The standoff/mask structure of claim 1 wherein the adhesive standoff layer comprises a double-sided tape.

7. The standoff/mask structure of claim 1 wherein the adhesive standoff layer has a thickness in the range of about 1 micrometer to about 500 micrometers.

8. The standoff/mask structure of claim 1 wherein the mask adhesive layer comprises an adhesive selected from the group consisting of a contact adhesive and a UV curable adhesive.

9. The standoff/mask structure of claim 1 wherein the mask adhesive layer has a thickness in the range of 1 micrometer to about 500 micrometers.

10. The standoff/mask structure of claim 1 wherein the mask adhesive layer has a thickness in the range of about 5 micrometers to about 50 micrometers.

11. The standoff/mask structure of claim 1 wherein each of the liner layer and the mask layer comprises a material selected from a group consisting of polyester, polyimide, polyamide, polyetherimide, polysulfone, polyethersulfone, polyetheretherketone, and polyphenylenesulfide.

12. The standoff/mask structure of claim 1 wherein each of the liner layer arid the mask layer has a thickness in the range of about 1 micrometer to about 500 micrometers.

13. The standoff/mask structure of claim 1 wherein each of the liner layer and the mask layer has a thickness in the range of about 10 micrometers to about 100 micrometers.

14. A method of making a standoff/mask structure comprising:

forming a plurality of apertures in a first laminate structure that includes a first adhesive layer disposed between a first liner layer and a second liner layer;

attaching a second laminate structure to the first laminate structure, wherein the second laminate structure comprises a second adhesive layer and a third liner layer; and

forming a plurality of apertures in the second laminate structure in alignment with the apertures in the first laminate structure.

15. The method of claim 14 wherein forming a plurality of apertures in a first laminate structure comprises laser cutting a plurality of apertures in a first laminate structure that includes a first adhesive layer disposed between a first liner layer and a second liner layer.

16. The method of claim 14 wherein forming a plurality of apertures in the second laminate structure comprises laser culling a plurality of apertures in the second laminate structure in alignment with the apertures in the first laminate structure.

17. The method of claim 14 wherein the apertures in the first laminate structure have a diameter in the range of about 8 micrometers to about 500 micrometers.

18. The method of claim 14 wherein the apertures in the first laminate structure have a diameter in the range of about 8 micrometers to about 500 micrometers and a center to center spacing of about 1.5 times such diameter.

19. The method of claim 14 wherein the apertures in the second laminate structure have a diameter in the range of about 5 micrometers to about 250 micrometers.

20. A standoff/mask structure made in accordance with the method of claim 14 .

21. A method of making an interconnected electrical circuit structure comprising:

applying a laminate standoff/mask structure over a plurality of contact regions of a first electrical circuit structure, wherein the multi-layer standoff/mask structure includes an adhesive standoff having a plurality of standoff openings aligned with the contact regions and a mask having a plurality of mask openings aligned with the standoff openings;

applying a conductive paste through the mask openings and the standoff openings so as to form conductive bumps on the plurality of contact regions of the first electrical circuit structure;

removing the mask; and

attaching a second electrical circuit structure to the standoff and the conductive bumps.

22. The method of claim 21 wherein the first circuit structure comprises one of the group consisting of a circuit board, a flexible circuit, an electromechanical device, an integrated circuit die, a semiconductor package, a thick film circuit, and a ceramic circuit board.

23. The method of claim 21 wherein the second circuit structure comprises one of the group consisting of a circuit board, a flexible circuit, an electromechanical device, an integrated circuit die, a semiconductor package, a thick film circuit, and a ceramic circuit board.

24. An interconnected electrical circuit structure made in accordance with the method of claim 21 .

25. A method of making an interconnected electrical circuit structure comprising:

applying a laminate standoff/mask structure over a plurality of contact regions of a first electrical circuit structure, wherein the multi-layer standoff/mask structure includes an adhesive standoff layer and a standoff carrying flexible liner having a plurality of standoff openings aligned with the contact regions, and a mask adhesive layer and a mask having a plurality of mask openings aligned with the standoff openings;

applying a conductive paste through the mask openings so as to form conductive bumps on the plurality of contact regions of the first electrical circuit structure;

removing the standoff carrying liner, the mask adhesive layer and the mask; and

attaching a second electrical circuit structure to the standoff and the conductive bumps.

Assignments (9)
SECURITY INTEREST Recorded Feb 13, 2024
From: XEROX CORPORATION
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 066741/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT RF 064760/0389 Recorded Feb 13, 2024
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: XEROX CORPORATION
Reel/Frame 068261/0001 →
SECURITY INTEREST Recorded Nov 20, 2023
From: XEROX CORPORATION
To: JEFFERIES FINANCE LLC, AS COLLATERAL AGENT
Reel/Frame 065628/0019 →
SECURITY INTEREST Recorded Jun 22, 2023
From: XEROX CORPORATION
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 064760/0389 →
RELEASE OF SECURITY INTEREST IN PATENTS AT R/F 062740/0214 Recorded May 18, 2023
From: CITIBANK, N.A., AS AGENT
To: XEROX CORPORATION
Reel/Frame 063694/0122 →
SECURITY INTEREST Recorded Nov 10, 2022
From: XEROX CORPORATION
To: CITIBANK, N.A., AS AGENT
Reel/Frame 062740/0214 →
RELEASE OF SECURITY INTEREST Recorded Sep 7, 2022
From: JPMORGAN CHASE BANK, N.A. AS SUCCESSOR-IN-INTEREST ADMINISTRATIVE AGENT AND COLLATERAL AGENT TO JPMORGAN CHASE BANK
To: XEROX CORPORATION
Reel/Frame 066728/0193 →
SECURITY AGREEMENT Recorded Oct 31, 2003
From: XEROX CORPORATION
To: JPMORGAN CHASE BANK, AS COLLATERAL AGENT
Reel/Frame 015134/0476 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2003
From: ANDREWS, JOHN R.; GERNER, BRADLEY J.; SCHMACHTENBERG, RICHARD III; SLENES, CHAD; SCHULTZ, SAMUEL V.
To: XEROX CORPORATION
Reel/Frame 014123/0577 →