IP Library Granted Patent US 7,305,589
Granted Patent B2
US 7,305,589 · App. 10/484,043 · Granted Dec 4, 2007

Memory card and its initial setting method

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Quick Facts
Patent No.
US 7,305,589
App. No.
10/484,043
Granted
Dec 4, 2007
Kind
B2
Abstract

In the initial setting of a memory card 1 , the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD 1 1 stored previously in the ROM, the write check data FD 1 2 stored in the ROM 4 a is written, if a fault is not detected, to the flash memory 2 , and this data is read again and is compared with the write check data FD 1 2 of the ROM 4 a . When any fault is not detected in comparison of these data, the CPU determines that the flash memory 2 is normal. Moreover, if a fault is detected in the comparison of data, the CPU sets the reset process fault data to a register 5 a to set a controller 3 to the sleep mode. When the command CMD is received during this period, data comparison is executed again.

Claims (36)

1. A memory card comprising:

a nonvolatile semiconductor memory storing operation check data in a certain storage area; and

a control part which includes:

a storage unit storing operation checked data for comparison to the operation check data read from said nonvolatile semiconductor memory; and

a processing unit performing an initial setting operation, and then performing a first check operation for comparing the operation check data read from said nonvolatile semiconductor memory with the operation checked data of said storage unit,

wherein said processing unit receives an operation instruction signal from an external circuit and issues in response thereto an instruction to said nonvolatile semiconductor memory in accordance with said operation instruction signal when said operation check data and said operation checked data for comparison are found to match with each other in said first check operation, and

wherein said processing unit performs said first check operation again when said operation check data and said operation checked data are found to be mismatched with each other.

2. The memory card according to claim 1 ,

wherein said processing unit performs a second check operation after said first check operation for storing write checked data to said nonvolatile semiconductor memory from said storage unit, reading write check data written to said nonvolatile semiconductor memory, and comparing the write check data read from said nonvolatile semiconductor memory and the write checked data of said storage unit, and

wherein said processing unit performs said second check operation again when the write check data read from said nonvolatile semiconductor memory and the write checked data of said storage unit are found to be mismatched with each other.

3. The memory card according to claim 2 ,

wherein said control part is provided with a data storage unit for storing fault data set by said processing unit, and

wherein when a fault is detected in any one of the comparison between the operation check data read from said nonvolatile semiconductor memory and the operation checked data in said storage unit and the comparison between the write check data read from said nonvolatile semiconductor memory and the write checked data of said storage unit, said processing unit sets the fault data to said data storage unit to set said control part to a sleep mode by interrupting the initial setting operation, and executes the initial setting operation when a setting command for checking whether the initial setting is completed or not is received from said external circuit during a period for setting the fault data to said data storage unit.

4. The memory card according to claim 2 ,

wherein said control part is provided with a data storage unit for storing fault data set by said processing unit, and

wherein when a fault is detected in any one of the comparison between the operation check data read from said nonvolatile semiconductor memory and the operation checked data in said storage unit and the comparison between the write check data read from said nonvolatile semiconductor memory and the write checked data of said storage unit, said processing unit sets the fault data to said data storage unit to set said control part to a sleep mode by interrupting the initial setting operation, and executes the initial setting operation again when a setting command for checking whether the initial setting is completed or not is received from said external circuit during a period for setting the fault data to said data storage unit.

5. A memory card comprising:

a nonvolatile semiconductor memory; and

a control part adapted to receive an operation instruction signal and an operation voltage from an external circuit and that issues an instruction for operation to said nonvolatile semiconductor memory in accordance with said operation instruction signal,

wherein operation check data is stored in a certain storage area of said nonvolatile semiconductor memory,

said control part comprising:

a processing unit for executing a predetermined processes based on a control program;

a nonvolatile storage unit storing the control program for operating said processing unit;

a volatile storage unit for temporarily storing input/output data and arithmetic data; and

an interface logic unit for receiving a plurality of commands to instruct various operations inputted and outputted from and to the external circuit and executing data input/output required for these operations,

wherein operation checked data to be compared with the operation check data read from said nonvolatile semiconductor memory is stored to a certain area of said nonvolatile storage unit, and

wherein said processing unit compares, in an initial setting operation, the operation check data read from said nonvolatile semiconductor memory with the operation checked data of said nonvolatile storage unit, and repeats, when a predetermined comparison result cannot be obtained, said initial setting operation when one of said plurality of commands is received, to check the operation of said nonvolatile semiconductor memory.

6. The memory card according to claim 5 ,

wherein write checked data to be written into said nonvolatile semiconductor memory is stored to said nonvolatile storage unit, and

wherein said processing unit checks operation of said nonvolatile semiconductor memory, in the initial setting operation, by comparing the operation check data read from said nonvolatile semiconductor memory with the operation checked data of said nonvolatile storage unit, writing the write checked data into said nonvolatile semiconductor memory, then reading write check data written into said nonvolatile semiconductor memory, and comparing the write check data read from said nonvolatile semiconductor memory with the write checked data of said nonvolatile storage unit.

7. The memory card according to claim 6 ,

wherein said interface logic unit is provided with a data storage unit for storing fault data, and

wherein when a fault is detected in any one of the comparison between the operation check data read from said nonvolatile semiconductor memory and the operation checked data of said nonvolatile storage unit and the comparison between the write check data read from said nonvolatile semiconductor memory and the write checked data of said nonvolatile storage unit, said processing unit sets the fault data to said data storage unit to set said control part to a sleep mode by interrupting the initial setting operation, and executes again the initial setting operation when a setting command for checking whether the initial setting operation has been ended is received from the external circuit during a period for setting the fault data to said data storage unit.

8. The memory card according to claim 5 ,

wherein said interface logic unit is provided with a data storage unit for storing fault data, and

wherein when a fault is detected in any one of the comparison between the operation check data read from said nonvolatile semiconductor memory and the operation checked data of said nonvolatile storage unit and the comparison between the write check data read from said nonvolatile semiconductor memory and the write checked data of said nonvolatile storage unit, said processing unit sets the fault data to said data storage unit to set said control part to a sleep mode by interrupting the initial setting operation, and executes again the initial setting operation when a setting command for checking whether the initial setting operation has been ended is received from the external circuit during a period for setting the fault data to said data storage unit.

Assignments (5)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2014
From: HITACHI ULSI SYSTEMS CO., LTD.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 032859/0252 →
CHANGE OF NAME Recorded Aug 13, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024864/0635 →
MERGER Recorded Aug 13, 2010
From: RENESAS TECHNOLOGY CORP.
To: NEC ELECTRONICS CORPORATION
Reel/Frame 024879/0190 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2004
From: OODATE, HIDEFUMI; SHIRAISHI, ATSUSHI; KURAKATA, SHIGEO; KATAYAMA, KUNIHIRO; KANAMORI, MOTOKI
To: RENESAS TECHNOLOGY CORP.; HITACHI ULSI SYSTEMS CO., LTD.
Reel/Frame 015601/0424 →