IP Library Granted Patent US 8,779,474
Granted Patent B2
US 8,779,474 · App. 10/539,251 · Granted Jul 15, 2014

Electric device comprising phase change material

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,779,474
App. No.
10/539,251
Granted
Jul 15, 2014
Kind
B2
Abstract

The electric device ( 1, 100 ) has a body ( 2, 101 ) with a resistor ( 7, 250 ) comprising a phase change material being changeable between a first phase and a second phase. The resistor ( 7, 250 ) has an electric resistance which depends on whether the phase change material is in the first phase or the second phase. The resistor ( 7, 250 ) is able to conduct a current for enabling a transition from the first phase to the second phase. The phase change material is a fast growth material which may be a composition of formula Sb 1−c M c with c satisfying 0.05≦c≦0.61, and M being one or more elements selected from the group of Ge, In, Ag, Ga, Te, Zn and Sn, or a composition of formula Sb a Te b X 100−(a+b) with a, b and 100−(a+b) denoting atomic percentages satisfying 1≦a/b≦8 and 4≦100−(a+b)≦22, and X being one or more elements selected from Ge, In, Ag, Ga and Zn.

Claims (1)

1. An electric device with a body having a resistor comprising a phase change material being changeable between a first phase and a second phase via crystallization initiating at an interface between crystalline and amorphous materials, the resistor having an electric resistance which depends on whether the phase change material is in the first phase or the second phase, the resistor being able to conduct a current for enabling a transition from the first phase to the second phase, the phase change material being a fast growth material, wherein the phase change material is a composition of formula Sb 1−c ,M c , with c satisfying 0.05≦c≦0.61, and M being one or more elements selected from the group of Ge, In, Ag, Ga, Te, Zn and Sn, wherein the phase change material comprises In or Sn in concentrations which range in total between 5 and 30 atomic percent.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 7, 2015
From: NXP B.V.
To: III HOLDINGS 6, LLC
Reel/Frame 036304/0330 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 29, 2012
From: LANKHORST, MARTIJN HENRI RICHARD; VAN PIETERSON, LIESBETH; WOLTERS, ROBERTUS ADRIANUS MARIA; MEINDERS, ERWIN RINALDO
To: KONINKLIJKE PHILIPS ELECTRONICS N.V.
Reel/Frame 027785/0985 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2008
From: KONINKLIJKE PHILIPS ELECTRONICS N.V.
To: NXP B.V.
Reel/Frame 021085/0959 →