Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate
View Patent ↗A substrate surface ( 10 S) is thermally oxidized to form an oxide film. The oxide film is patterned so that the substrate surface ( 10 S) in an active region is exposed. An oxide film ( 20 ) is thereby provided. An exposed substrate surface ( 10 S) is thermally oxidized, to form a thermal oxide film. This thermal oxide film is thereafter removed at least in an element forming region. A silicon film ( 41 ) is epitaxially grown on the exposed substrate surface ( 10 S). Thereafter the silicon film ( 41 ) is polished by CMP to an extent that an upper surface of the silicon film after polishing is not more than an upper surface of the oxide film ( 20 ) in height. Next, the surface of the silicon film is thermally oxidized to form a thermal oxide film. After ion implantation of various types, this thermal oxide film is removed.
1. A method of manufacturing a semiconductor device, comprising the steps of:
(i) forming a insulating film into a predetermined pattern on a substrate surface of a semiconductor substrate, said semiconductor substrate including an element forming region and an alignment mark region,
(j) epitaxially growing a semiconductor film on an exposed substrate surface after said step (i);
(k) polishing said semiconductor film to an extent that an upper surface of said semiconductor film is not more than an upper surface of said insulating film in height; and
(l) after said step (k), increasing a degree of a step height defined on an exposed surface in said alignment mark region to obtain an alignment mark.
2. The method according to claim 1 , wherein
said step includes the step of:
(l-1) removing at least a part of said insulating filming said alignment mark region.
3. The method according to claim 1 , wherein
said step (l) includes the step of:
(l-2) removing at least a part of said semiconductor film in said alignment mark region.