IP Library Granted Patent US 7,094,678
Granted Patent B2
US 7,094,678 · App. 10/752,661 · Granted Aug 22, 2006

Electrostatic discharge protection of thin-film resonators

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Quick Facts
Patent No.
US 7,094,678
App. No.
10/752,661
Granted
Aug 22, 2006
Kind
B2
Abstract

A filter having a thin-film resonator fabricated on a semiconductor substrate and a method of making the same are disclosed. The filter has a bonding pad connected to the resonator and in contact with the substrate to form a Schottky diode with the substrate to protect the resonator from electrostatic discharges.

Claims (13)

1. A method of fabricating an apparatus, the method comprising:

fabricating a bottom electrode layer on a substrate, the bottom electrode layer having an opening;

fabricating a piezoelectric layer on the bottom electrode layer and on the substrate;

fabricating a top electrode layer on the piezoelectric layer and on the substrate;

wherein overlapping portions of the bottom electrode layer, the piezoelectric layer, and the top electrode layer forming a resonator; and

fabricating a bonding pad on the bottom electrode layer, the bonding pad in contact with the substrate through the opening of the bottom electrode, the bonding pad and the substrate forming a diode.

2. The method recited in claim 1 wherein the top electrode layer has an opening; and further comprising a step of fabricating a bonding pad on the top electrode layer, the bonding pad in contact with the substrate through the opening of the top electrode, the bonding pad and the substrate forming a diode.

3. The method recited in claim 1 further comprising a step of fabricating a seed layer under the bottom electrode layer.

4. The method recited in claim 1 wherein the seed layer having an opening aligned with the opening of the bottom electrode allowing the bonding pad to contact the substrate through the opening.

5. The method recited in claim 1 wherein said bonding pad forms a Schottky diode with the substrate.

6. The method recited in claim 1 wherein said bonding pad comprises conductor selected from a group consisting of gold, nickel, and chrome.

7. The method recited in claim 1 wherein the piezoelectric layer comprises Aluminum Nitride and said bottom and top electrode layers comprises Molybdenum.

8. The method recited in claim 1 wherein the bottom electrode includes a plurality of openings through which the bonding pad contacts the substrate.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE NAME PREVIOUSLY RECORDED AT REEL: 017206 FRAME: 0666. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded May 6, 2016
From: AGILENT TECHNOLOGIES, INC.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 038632/0662 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2006
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
Reel/Frame 017675/0477 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 22, 2006
From: AGILENT TECHNOLOGIES, INC.
To: AVAGO TECHNOLOGIES GENERAL IP PTE. LTD.
Reel/Frame 017206/0666 →