Thin film transistor, liquid crystal display device and method of fabricating the thin film transistor
View Patent ↗The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film 2 , a gate insulating film 3 and a gate electrode are sequentially stacked on an insulating substrate 1 . The amorphous silicon film 2 includes a low defect-density amorphous silicon layer 5 formed at a low deposition rate and a high deposition rate amorphous silicon layer 6 formed at a deposition rate higher than that of the low defect-density amorphous silicon layer 5 . The low defect-density amorphous silicon layer 5 in the amorphous silicon film 2 is grown closer to the insulating substrate 1 , and the high deposition rate amorphous silicon layer 6 is grown closer to the gate insulating film 3.
1. A method of fabricating a thin film transistor of a top-gate type, in which source and drain electrodes, an island-shaped amorphous silicon film, a gate insulating film and a gate electrode are sequentially laminated, the method comprising:
forming a first amorphous silicon layer of the island-shaped amorphous silicon film in contact with the source and drain electrodes; and
forming a second amorphous silicon layer of the island-shaped amorphous silicon film on the first amorphous silicon layer to contact the gate insulating film, wherein the growth rate of the first amorphous silicon layer is slower than that of the second amorphous silicon layer and the growth rate of the second amorphous silicon layer is about 500 Å/min, so that contact conductance is dominant when the top-gate type thin film transistor is ON to maximize its ON current.
2. The method of claim 1 , wherein a growth rate of the first amorphous silicon layer is about 50 Å/min.
3. The method of claim 1 , wherein a thickness of the first amorphous silicon layer is thinner than that of the second amorphous silicon layer.
4. The method of claim 1 , wherein a thickness of the first amorphous silicon layer is about 50 Å.
5. The method of claim 1 , wherein a thickness of the second amorphous silicon layer is about 450 Å.