Stable solutions of organic semiconducting compounds
The invention relates to stable solutions comprising organic semiconducting compounds, characterized in that they comprise at least one solvent and, as a stabilizer, at least one basic compound, and also to their use for the production of stable semiconducting layers for semiconductor technology.
1 . Solutions comprising organic semiconducting compounds, characterized in that the solutions comprise at least one solvent and, as a stabilizer, at least one basic compound.
2 . Solutions according to claim 1 , characterized in that the basic compound has a boiling point of at most 260° C.
3 . Solutions according to claim 1 , characterized in that the basic compound is a primary, secondary or tertiary amine, a basic aromatic or aliphatic heterocyclic compound or a mixture of two or more of these compounds.
4 . Solutions according to claim 1 , characterized in that the basic compound is an optionally substituted aromatic or an optionally substituted saturated or unsaturated aliphatic heterocyclic compound having 5 to 20 ring carbon atoms and 1 to 3 identical or different ring heteroatoms from the group of nitrogen, oxygen and sulphur,
or a compound of the general formula (I)
H x N(R 1,2,3 ) 3−x (I)
where
x is 0, 1 or 2,
R 1,2,3 is one, two or three identical or different R 1 , R 2 , R 3 radicals,
R 1 , R 2 , R 3 are the same or different and are each optionally substituted, linear or branched C 1 -C 20 -alkyl, C 1 -C 20 -cycloalkyl or C 1 -C 20 -aryl.
5 . Solutions according to claim 1 , characterized in that the basic compound is an alkali metal or alkaline earth metal hydroxide, an alkali metal or alkaline earth metal carbonate, an alkali metal or alkaline earth metal salt of a weak acid or a mixture of two or more of these compounds or a polymer containing basic groups.
6 . Solutions according to claim 1 , characterized in that the organic semiconducting compounds are compounds of the general formula (II)
R 4a Ar n R 4b (II)
where
n is an integer from 4 to 100 000,
R 4a , R 4b are each independently H or a C 1 -C 20 -alkyl group which is optionally interrupted by one or more oxygen or sulphur atoms, silylene, phosphonoyl or phosphoryl groups and
Ar is optionally substituted 1,4-phenylene, 2,7-fluorene or 2,5-thiophene, and Ar may be the same or different.
7 . Solutions according to claim 1 , characterized in that the organic semiconducting compounds are compounds of the general formula (II-a)
where
n is an integer from 4 to 100 000,
R 4a , R 4b are each independently H or a C 1 -C 20 -alkyl group which is optionally interrupted by one or more oxygen or sulphur atoms, silylene, phosphonoyl or phosphoryl groups and
R 5 , R 6 are each independently H or an optionally substituted C 1 -C 20 -alkyl group, an optionally substituted C 1 -C 20 -alkoxy group or are together an optionally substituted C 1 -C 6 -dioxyalkylene group.
8 . Solutions according to claim 6 , characterized in that n is an integer from 4 to 100.
9 . Solutions according to claim 6 , characterized in that n is an integer from 4 to 10.
10 . Solutions according to claim 6 , characterized in that R 4a and R 4b are each independently a C 1 -C 12 -alkyl group.
11 . Solutions according to claim 7 , characterized in that R 5 and R 6 are each independently H or a C 1 -C 6 -alkyl group.
12 . Solutions according to claim 1 , characterized in that the solution comprises, as the solvent, halogenated aromatic or aliphatic compounds, aromatic or aliphatic compounds containing ether or keto groups or mixtures of two or more of these compounds.
13 . Solutions according to claim 1 , characterized in that the solution comprises, as a solvent, chloroform, toluene, chlorobenzene or 1,2,4-trichlorobenzene.
14 . Process of producing semiconducting layers comprising using solutions according to claim 1 .
15 . Layers comprising compounds of the general formula (II),
R 4a Ar n R 4b (II)
where
n is an integer from 4 to 100 000,
R 4a , R 4b are each independently H or a C 1 -C 20 -alkyl group which is optionally interrupted by one or more oxygen or sulphur atoms, silylene, phosphonoyl or phosphoryl groups and
Ar is optionally substituted 1,4-phenylene, 2,7-fluorene or 2,5-thiophene, and Ar may be the same or different,
characterized in that they are produced from solutions according to claim 1 and are semiconducting.
16 . Layers according to claim 15 , comprising compounds of the general formula (II-a),
where
n is an integer from 4 to 100 000,
R 4a , R 4b are each independently H or a C 1 -C 20 -alkyl group which is optionally interrupted by one or more oxygen or sulphur atoms, silylene, phosphonoyl or phosphoryl groups and
R 5 , R 6 are each independently H or an optionally substituted C 1 -C 20 -alkyl group, an optionally substituted C 1 -C 20 -alkoxy group or are together an optionally substituted C 1 -C 6 -dioxyalkylene group,
characterized in that they are produced from solutions according to claim 1 and are semiconducting.
17 . Active and light-emitting electronic components such as field-effect transistors, organic luminescence diodes, photovoltaic cells, lasers or sensors comprising layers according to claim 15 as semiconductors.