Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor
View Patent ↗A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. Irregularities are formed in a width direction of the semiconductor film on both edge portions in the channel region.
1. A thin film transistor comprising:
a semiconductor film extending between a source electrode and a drain electrode, said semiconductor film including irregularities formed on both edges thereof along extending direction of the semiconductor film and in a direction orthogonal to the extending direction, a concave portion of the irregularities being located outside a region sandwiched by a pair of virtual straight lines linking both ends of opposed edges of said source electrode and said drain electrode; and
a gate electrode disposed below said channel region with interposing a gate insulating film between said semiconductor film and said gate electrode.
2. A liquid crystal display comprising:
an active matrix substrate on which thin film transistors are formed; and
a counter substrate opposed to said active matrix substrate for interposing a liquid crystal layer,
wherein each of said thin film transistors includes:
a semiconductor film extending between a source electrode and a drain electrode, said semiconductor film including irregularities formed on both edges thereof along extending direction of the semiconductor film and in a direction orthogonal to the extending direction, a concave portion of the irregularities being located outside a region sandwiched by a pair of virtual straight lines linking both ends of opposed edges of said source electrode and said drain electrode; and
a gate electrode being disposed below said channel region with interposing a gate insulating film between said semiconductor film and said gate electrode.