IP Library › Granted Patent US 7,378,682
Granted Patent B2
US 7,378,682 · App. 11/052,688 · Granted May 27, 2008

Memory element using active layer of blended materials

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,378,682
App. No.
11/052,688
Granted
May 27, 2008
Kind
B2
Abstract

The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

Claims (16)

1. A memory device comprising:

first and second electrodes;

a passive layer between the first and second electrodes; and

an active layer between the first and second electrodes for receiving a charged specie from the passive layer, the active layer comprising a material for promoting substantially uniform distribution of the charged specie in the active layer.

2. The memory device of claim 1 wherein the active layer comprises (i) a first material, and (ii) a second material, the second material promoting substantially uniform distribution of the charged specie in the active layer.

3. The memory device of claim 2 wherein the active layer comprises a mixture of the first and second materials.

4. The memory device of claim 3 wherein the second material comprises a polymer.

5. The memory device of claim 4 wherein the first material comprises a polymer.

6. The memory device of claim 4 wherein the second material comprises at least one material selected from the group consisting of poly(ethyleneoxide), poly(methylmethacrylate), poly(ethyleneglycol), poly(caprolactone) and poly(propyleneoxide).

7. The memory device of claim 6 wherein the first material comprises poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-alt-5,5′-(2,2′bithiophene) (F8T2).

8. A memory device comprising:

first and second electrodes;

a passive layer between the first and second electrodes and on and in contact with the first electrode; and

an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer, the active layer comprising a mixture of (i) a first polymer, and (ii) a second polymer for promoting substantially uniform distribution of the charged specie in the active layer.

9. The memory device of claim 8 wherein the second polymer comprises at least one material selected from the group consisting of poly(ethyleneoxide), poly(methylmethacrylate), poly(ethyleneglycol), poly(caprolactone) and poly(propyleneoxide).

10. The memory device of claim 9 wherein the first polymer comprises poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-alt-5,5′-(2,2′bithiophene) (F8T2).