Method of processing substrate and chemical used in the same
The method of processing an organic film pattern formed on a substrate, includes, in sequence, a heating step of heating the organic film pattern, a removal step of removing one of an alterated layer and a deposited layer both formed on the organic film pattern, and a fusion/deformation step of fusing the organic film pattern to deform the organic film pattern. At least a part of the removal step is carried out by applying chemical to the organic film pattern.
1 . A method of processing an organic film pattern formed on a substrate, including, in sequence:
a heating step of heating said organic film pattern; and
a fusion/deformation step of fusing said organic film pattern to deform said organic film pattern.
2 . The method as set forth in claim 1 , wherein at least one of exposure to light, development, wet etching and dry etching was applied to said organic film pattern prior to said heating step.
3 . The method as set forth in claim 1 , wherein moisture acid and/or alkaline solution having penetrated into said organic film pattern in steps having been carried out prior to said heating step is removed in said heating step.
4 . The method as set forth in claim 1 , wherein said heating step recovers adhesive force between said organic film pattern and an underlying film thereof or a substrate, when said adhesive force lowers.
5 . The method as set forth in claim 1 , wherein said heating step is carried out at a temperature in the range of 50 to 150 degrees centigrade both inclusive.
6 . The method as set forth in claim 5 , wherein said heating step is carried out at a temperature in the range of 100 to 130 degrees centigrade both inclusive.
7 . The method as set forth in claim 1 , wherein said heating step is carried out for 60 to 300 seconds both inclusive.
8 . The method as set forth in claim 1 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern being used as a mask, before said fusion/deformation step is applied to said organic film pattern.
9 . The method as set forth in claim 1 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern being used as a mask, after said fusion/deformation step was applied to said organic film pattern.
10 . The method as set forth in claim 1 , wherein said fusion/deformation step is comprised of a step of enlarging an area of said organic film pattern.
11 . The method as set forth in claim 10 , wherein said fusion/deformation step is comprised of a step of integrating adjacent organic film patterns with each other.
12 . The method as set forth in claim 1 , wherein said fusion/deformation step is comprised of a step of planarizing said organic film pattern.
13 . The method as set forth in claim 1 , wherein said fusion/deformation step is comprised of a step of deforming said organic film pattern such that said organic film pattern acts as an electrically insulating film covering therewith a circuit pattern formed on said substrate.
14 . The method as set forth in claim 1 , wherein said fusion/deformation step is comprised of a step of applying gas atmosphere to said organic film pattern.
15 . The method as set forth in claim 14 , wherein said gas atmosphere is of organic solvent.
16 . The method as set forth in claim 1 , wherein said fusion/deformation step is entirely carried out by applying said chemical to said organic film pattern.
17 . The method as set forth in claim 1 , wherein said removal step is comprised, in sequence, of a step of ashing said organic film pattern, and a step of applying said chemical to said organic film pattern.
18 . The method as set forth in claim 1 , wherein chemical contains at least acid chemical.
19 . The method as set forth in claim 1 , wherein chemical contains at least organic solvent.
20 . The method as set forth in claim 1 , wherein chemical contains at least alkaline chemical.
21 . The method as set forth in claim 19 , wherein said organic solvent contains at least amine.
22 . The method as set forth in claim 1 , wherein said chemical contains at least organic solvent and amine.
23 . The method as set forth in claim 20 , wherein said alkaline chemical contains at least amine and water.
24 . The method as set forth in claim 1 , wherein said chemical contains at least alkaline chemical and amine.
25 . The method as set forth in claim 21 , wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.
26 . The method as set forth in claim 1 , wherein said chemical contains said amine in the range of 0.01 to 10 weight % both inclusive.
27 . The method as set forth in claim 26 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.
28 . The method as set forth in claim 27 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.
29 . The method as set forth in claim 1 , wherein said chemical contains anticorrosive.
30 . The method as set forth in claim 1 , wherein said chemical has a function of developing said organic film pattern.
31 . The method as set forth in claim 30 , wherein said chemical is comprised of TMAH (tetramethylammonium hydroxide) or inorganic alkaline aqueous solution.
32 . The method as set forth in claim 31 , wherein said inorganic alkaline aqueous solution is selected from NaOH and CaOH.
33 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light; and
developing said organic film pattern by applying said chemical to said organic film pattern.
34 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
exposing said organic film pattern to a light; and
developing said organic film pattern by applying said chemical to said organic film pattern.
35 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light;
ashing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
36 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
37 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
exposing said organic film pattern to a light;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
38 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light;
ashing said organic film pattern;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
39 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
applying said chemical to said organic film pattern without developing said organic film pattern;
exposing said organic film pattern to a light; and
developing said organic film pattern by applying said chemical to said organic film pattern.
40 . The method as set forth in claim 33 , wherein said organic film pattern is exposed to a light only in an area associated with a predetermined area of said substrate.
41 . The method as set forth in claim 40 , wherein said organic film pattern is exposed to a light in said area by radiating a light entirely over said area or by scanning said area with a spot-light.
42 . The method as set forth in claim 40 , wherein said predetermined area has an area equal to or greater than 1/10 of an area of said substrate.
43 . The method as set forth in claim 40 , wherein said organic film pattern is exposed to ultra-violet rays, fluorescence, or natural light.
44 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
45 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
46 . The method as set forth in claim 30 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
47 . The method as set forth in claim 5 , wherein said ashing is comprised of a step of etching a film formed on said substrate with at least one of plasma, ozone and ultra-violet ray.
48 . The method as set forth in claim 1 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another.
49 . The method as set forth in claim 30 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a thickness of a portion having a small thickness is further reduced by developing said organic film pattern.
50 . The method as set forth in claim 30 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a portion having a small thickness is selectively removed by developing said organic film pattern.
51 . The method as set forth in claim 49 , wherein said organic film pattern is kept not exposed to a light until said chemical is applied to said organic film pattern.
52 . A method of processing an organic film pattern formed on a substrate, including, in sequence:
a heating step of heating said organic film pattern;
a removal step of removing one of an alterated layer and a deposited layer both formed on said organic film pattern; and
a fusion/deformation step of fusing said organic film pattern to deform said organic film pattern,
wherein at least a part of said removal step is carried out by applying chemical to said organic film pattern.
53 . The method as set forth in claim 52 , wherein at least one of exposure to light, development, wet etching and dry etching was applied to said organic film pattern prior to said heating step.
54 . The method as set forth in claim 52 , wherein moisture acid and/or alkaline solution having penetrated into said organic film pattern in steps having been carried out prior to said heating step is removed in said heating step.
55 . The method as set forth in claim 52 , wherein said heating step recovers adhesive force between said organic film pattern and an underlying film thereof or a substrate, when said adhesive force lowers.
56 . The method as set forth in claim 52 , wherein said heating step is carried out at a temperature in the range of 50 to 150 degrees centigrade both inclusive.
57 . The method as set forth in claim 56 , wherein said heating step is carried out at a temperature in the range of 100 to 130 degrees centigrade both inclusive.
58 . The method as set forth in claim 52 , wherein said heating step is carried out for 60 to 300 seconds both inclusive.
59 . The method as set forth in claim 52 , wherein only one of said alterated layer and said deposited layer is removed in said removal step.
60 . The method as set forth in claim 52 , wherein said alterated layer formed at a surface of said organic film pattern is removed to cause a non-alterated portion of said organic film patter to appear.
61 . The method as set forth in claim 52 , wherein said alterated layer is caused by at least one of degradation of a surface of said organic film pattern caused by being aged, thermal oxidation, and thermal hardening.
62 . The method as set forth in claim 52 , wherein said alterated layer is caused by wet-etching with wet-etchant.
63 . The method as set forth in claim 52 , wherein said alterated layer is caused by dry-etching or ashing.
64 . The method as set forth in claim 52 , wherein said alterated layer is caused by deposition caused by dry-etching.
65 . The method as set forth in claim 52 , wherein said deposited layer formed at a surface of said organic film pattern is removed to cause a non-alterated portion of said organic film patter to appear.
66 . The method as set forth in claim 52 , wherein said deposited layer is caused by dry-etching.
67 . The method as set forth in claim 52 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern being used as a mask, before said fusion/deformation step is applied to said organic film pattern.
68 . The method as set forth in claim 52 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern being used as a mask, after said fusion/deformation step was applied to said organic film pattern.
69 . The method as set forth in claim 52 , wherein said fusion/deformation step is comprised of a step of enlarging an area of said organic film pattern.
70 . The method as set forth in claim 69 , wherein said fusion/deformation step is comprised of a step of integrating adjacent organic film patterns with each other.
71 . The method as set forth in claim 52 , wherein said fusion/deformation step is comprised of a step of planarizing said organic film pattern.
72 . The method as set forth in claim 52 , wherein said fusion/deformation step is comprised of a step of deforming said organic film pattern such that said organic film pattern acts as an electrically insulating film covering therewith a circuit pattern formed on said substrate.
73 . The method as set forth in claim 52 , wherein said fusion/deformation step is comprised of a step of applying gas atmosphere to said organic film pattern.
74 . The method as set forth in claim 73 , wherein said gas atmosphere is of organic solvent.
75 . The method as set forth in claim 52 , wherein said fusion/deformation step is entirely carried out by applying said chemical to said organic film pattern.
76 . The method as set forth in claim 52 , wherein said removal step is comprised, in sequence, of a step of ashing said organic film pattern, and a step of applying said chemical to said organic film pattern.
77 . The method as set forth in claim 52 , wherein chemical contains at least acid chemical.
78 . The method as set forth in claim 52 , wherein chemical contains at least organic solvent.
79 . The method as set forth in claim 52 , wherein chemical contains at least alkaline chemical.
80 . The method as set forth in claim 79 , wherein said organic solvent contains at least amine.
81 . The method as set forth in claim 52 , wherein said chemical contains at least organic solvent and amine.
82 . The method as set forth in claim 81 , wherein said alkaline chemical contains at least amine and water.
83 . The method as set forth in claim 52 , wherein said chemical contains at least alkaline chemical and amine.
84 . The method as set forth in claim 80 , wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.
85 . The method as set forth in claim 52 , wherein said chemical contains said amine in the range of 0.01 to 10 weight % both inclusive.
86 . The method as set forth in claim 85 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.
87 . The method as set forth in claim 86 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.
88 . The method as set forth in claim 52 , wherein said chemical contains anticorrosive.
89 . The method as set forth in claim 52 , wherein said chemical has a function of developing said organic film pattern.
90 . The method as set forth in claim 89 , wherein said chemical is comprised of TMAH (tetramethylammonium hydroxide) or inorganic alkaline aqueous solution.
91 . The method as set forth in claim 90 , wherein said inorganic alkaline aqueous solution is selected from NaOH and CaOH.
92 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light; and
developing said organic film pattern by applying said chemical to said organic film pattern.
93 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
exposing said organic film pattern to a light; and
developing said organic film pattern by applying said chemical to said organic film pattern.
94 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light;
ashing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
95 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
96 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
exposing said organic film pattern to a light;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
97 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light;
ashing said organic film pattern;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
98 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
applying said chemical to said organic film pattern without developing said organic film pattern;
exposing said organic film pattern to a light; and
developing said organic film pattern by applying said chemical to said organic film pattern.
99 . The method as set forth in claim 92 , wherein said organic film pattern is exposed to a light only in an area associated with a predetermined area of said substrate.
100 . The method as set forth in claim 99 , wherein said organic film pattern is exposed to a light in said area by radiating a light entirely over said area or by scanning said area with a spot-light.
101 . The method as set forth in claim 99 , wherein said predetermined area has an area equal to or greater than 1/10 of an area of said substrate.
102 . The method as set forth in claim 89 , wherein said organic film pattern is exposed to ultra-violet rays, fluorescence, or natural light.
103 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
104 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
105 . The method as set forth in claim 89 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
106 . The method as set forth in claim 63 , wherein said ashing is comprised of a step of etching a film formed on said substrate with at least one of plasma, ozone and ultra-violet ray.
107 . The method as set forth in claim 52 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another.
108 . The method as set forth in claim 89 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a thickness of a portion having a small thickness is further reduced by developing said organic film pattern.
109 . The method as set forth in claim 89 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a portion having a small thickness is selectively removed by developing said organic film pattern.
110 . The method as set forth in claim 89 , wherein said organic film pattern is kept not exposed to a light until said chemical is applied to said organic film pattern.
111 . A method of processing an organic film pattern formed on a substrate, including, in sequence:
a removal step of removing one of an alterated layer and a deposited layer both formed on said organic film pattern;
a heating step of heating said organic film pattern; and
a fusion/deformation step of fusing said organic film pattern to deform said organic film pattern,
wherein at least a part of said removal step is carried out by applying chemical to said organic film pattern.
112 . The method as set forth in claim 111 , wherein at least one of exposure to light, development, wet etching and dry etching was applied to said organic film pattern prior to said heating step.
113 . The method as set forth in claim 111 , wherein moisture acid and/or alkaline solution having penetrated into said organic film pattern in steps having been carried out prior to said heating step is removed in said heating step.
114 . The method as set forth in claim 111 , wherein said heating step recovers adhesive force between said organic film pattern and an underlying film thereof or a substrate, when said adhesive force lowers.
115 . The method as set forth in claim 111 , wherein said heating step is carried out at a temperature in the range of 50 to 150 degrees centigrade both inclusive.
116 . The method as set forth in claim 115 , wherein said heating step is carried out at a temperature in the range of 100 to 130 degrees centigrade both inclusive.
117 . The method as set forth in claim 111 , wherein said heating step is carried out for 60 to 300 seconds both inclusive.
118 . The method as set forth in claim 111 , wherein only one of said alterated layer and said deposited layer is removed in said removal step.
119 . The method as set forth in claim 111 , wherein said alterated layer formed at a surface of said organic film pattern is removed to cause a non-alterated portion of said organic film patter to appear.
120 . The method as set forth in claim 111 , wherein said alterated layer is caused by at least one of degradation of a surface of said organic film pattern caused by being aged, thermal oxidation, and thermal hardening.
121 . The method as set forth in claim 111 , wherein said alterated layer is caused by wet-etching with wet-etchant.
122 . The method as set forth in claim 111 , wherein said alterated layer is caused by dry-etching or ashing.
123 . The method as set forth in claim 111 , wherein said alterated layer is caused by deposition caused by dry-etching.
124 . The method as set forth in claim 111 , wherein said deposited layer formed at a surface of said organic film pattern is removed to cause a non-alterated portion of said organic film patter to appear.
125 . The method as set forth in claim 111 , wherein said deposited layer is caused by dry-etching.
126 . The method as set forth in claim 111 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern being used as a mask, before said fusion/deformation step is applied to said organic film pattern.
127 . The method as set forth in claim 111 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern being used as a mask, after said fusion/deformation step was applied to said organic film pattern.
128 . The method as set forth in claim 111 , wherein said fusion/deformation step is comprised of a step of enlarging an area of said organic film pattern.
129 . The method as set forth in claim 128 , wherein said fusion/deformation step is comprised of a step of integrating adjacent organic film patterns with each other.
130 . The method as set forth in claim 111 , wherein said fusion/deformation step is comprised of a step of planarizing said organic film pattern.
131 . The method as set forth in claim 111 , wherein said fusion/deformation step is comprised of a step of deforming said organic film pattern such that said organic film pattern acts as an electrically insulating film covering therewith a circuit pattern formed on said substrate.
132 . The method as set forth in claim 111 , wherein said fusion/deformation step is comprised of a step of applying gas atmosphere to said organic film pattern.
133 . The method as set forth in claim 132 , wherein said gas atmosphere is of organic solvent.
134 . The method as set forth in claim 111 , wherein said fusion/deformation step is entirely carried out by applying said chemical to said organic film pattern.
135 . The method as set forth in claim 111 , wherein said removal step is comprised, in sequence, of a step of ashing said organic film pattern, and a step of applying said chemical to said organic film pattern.
136 . The method as set forth in claim 111 , wherein chemical contains at least acid chemical.
137 . The method as set forth in claim 111 , wherein chemical contains at least organic solvent.
138 . The method as set forth in claim 111 , wherein chemical contains at least alkaline chemical.
139 . The method as set forth in claim 137 , wherein said organic solvent contains at least amine.
140 . The method as set forth in claim 111 , wherein said chemical contains at least organic solvent and amine.
141 . The method as set forth in claim 140 , wherein said alkaline chemical contains at least amine and water.
142 . The method as set forth in claim 111 , wherein said chemical contains at least alkaline chemical and amine.
143 . The method as set forth in claim 139 , wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxylamine, diethylhydroxylamine, diethylhydroxyl amine anhydride, pyridine, and picoline.
144 . The method as set forth in claim 111 , wherein said chemical contains said amine in the range of 0.01 to 10 weight % both inclusive.
145 . The method as set forth in claim 144 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.
146 . The method as set forth in claim 145 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.
147 . The method as set forth in claim 111 , wherein said chemical contains anticorrosive.
148 . The method as set forth in claim 111 , wherein said chemical has a function of developing said organic film pattern.
149 . The method as set forth in claim 90 , wherein said chemical is comprised of TMAH (tetramethylammonium hydroxide) or inorganic alkaline aqueous solution.
150 . The method as set forth in claim 149 , wherein said inorganic alkaline aqueous solution is selected from NaOH and CaOH.
151 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of exposing said organic film pattern to a light; and
developing said organic film pattern by applying said chemical to said organic film pattern.
152 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of ashing said organic film pattern;
exposing said organic film pattern to a light; and
developing said organic film pattern by applying said chemical to said organic film pattern.
153 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light;
ashing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
154 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
155 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
exposing said organic film pattern to a light;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
156 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of:
exposing said organic film pattern to a light;
ashing said organic film pattern;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
157 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
applying said chemical to said organic film pattern without developing said organic film pattern;
exposing said organic film pattern to a light; and
developing said organic film pattern by applying said chemical to said organic film pattern.
158 . The method as set forth in claim 151 , wherein said organic film pattern is exposed to a light only in an area associated with a predetermined area of said substrate.
159 . The method as set forth in claim 158 , wherein said organic film pattern is exposed to a light in said area by radiating a light entirely over said area or by scanning said area with a spot-light.
160 . The method as set forth in claim 158 , wherein said predetermined area has an area equal to or greater than 1/10 of an area of said substrate.
161 . The method as set forth in claim 148 , wherein said organic film pattern is exposed to ultra-violet rays, fluorescence, or natural light.
162 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of:
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
163 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
164 . The method as set forth in claim 148 , wherein said removal step is comprised, in sequence, of:
ashing said organic film pattern;
applying said chemical to said organic film pattern without developing said organic film pattern; and
developing said organic film pattern by applying said chemical to said organic film pattern.
165 . The method as set forth in claim 122 , wherein said ashing is comprised of a step of etching a film formed on said substrate with at least one of plasma, ozone and ultra-violet ray.
166 . The method as set forth in claim 111 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another.
167 . The method as set forth in claim 148 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a thickness of a portion having a small thickness is further reduced by developing said organic film pattern.
168 . The method as set forth in claim 148 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a portion having a small thickness is selectively removed by developing said organic film pattern.
169 . The method as set forth in claim 148 , wherein said organic film pattern is kept not exposed to a light until said chemical is applied to said organic film pattern.
170 . A chemical containing amine, used in the method defined in claim 21 , containing said amine in the range of 0.01 to 10 weight % both inclusive.
171 . The chemical as set forth in claim 170 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.
172 . The chemical as set forth in claim 171 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.
173 . The chemical as set forth in claim 170 , wherein said amine is selected from a group consisting of hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.
174 . A chemical containing amine, used in the method defined in claim 80 , containing said amine in the range of 0.01 to 10 weight % both inclusive.
175 . The chemical as set forth in claim 174 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.
176 . The chemical as set forth in claim 175 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.
177 . The chemical as set forth in claim 174 , wherein said amine is selected from a group consisting of hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.
178 . A chemical containing amine, used in the method defined in claim 139 , containing said amine in the range of 0.01 to 10 weight % both inclusive.
179 . The chemical as set forth in claim 178 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.
180 . The chemical as set forth in claim 179 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.
181 . The chemical as set forth in claim 178 , wherein said amine is selected from a group consisting of hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.