IP Library Granted Patent US 7,300,605
Granted Patent B2
US 7,300,605 · App. 11/089,351 · Granted Nov 27, 2007

Phosphor and device using the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,300,605
App. No.
11/089,351
Granted
Nov 27, 2007
Kind
B2
Abstract

A phosphor having a magnetoplumbite-type crystal structure and comprising at least one element selected from B, Si, P, Ge, Ti, V, Ni, Ta, Nb, Mo, W, Yb, Tm and Bi.

Claims (10)

1. A phosphor having a magnetoplumbite-type crystal structure and comprising at least one element selected from B, Si, P, Ge, Ti, V, Ni, Ta, Nb, Mo, W, Yb, Tm and Bi, the phosphor being a blue phosphor further comprising Eu 2+ .

2. A phosphor having a magnetoplumbite-type crystal structure and comprising at least one element selected from B, Si, P, Ge, Ti, V, Ni, Ta, Nb, Mo, W, Yb, Tm and Bi, the phosphor being shown by the formula (La 1−x Tb x )(Mg 1−a Mn a )(Al 11−c V c )O 19 , wherein x is from 0 to 0.5, a is from 0 to 0.1, and c is from 0.0001 to 0.01.

3. A phosphor having a magnetoplumbite-type crystal structure and comprising at least one element selected from B, Si, P, Ge, Ti, V, Ni, Ta, Nb, Mo, W, Yb, Tm and Bi, the phosphor being shown by the formula (La 1−x−y Tb x Yb y )(Mg 1−a Mn a )Al 11 O 19 , wherein x is from 0 to 0.5, y is from 0.0001 to 0.1, and ais from 0 to 0.1.

4. A phosphor having a magnetoplumbite-type crystal structure and comprising at least one element selected from B, Si, P, Ge, Ti, V, Ni, Ta, Nb, Mo, W, Yb, Tm and Bi, the phosphor being shown by the formula (La 1−x−y Tb x Sr y )(Mg 1−a−b−y Mn a Zn b )(Al 11−c+y V c ) O 19 , wherein x is from 0 to 0.5, y is from 0 to 0.1, a is from 0 to 0.1, b is from 0 to 0.1, and c is from 0.0001 to 0.01.

5. A phosphor having a magnetoplumbite-type crystal structure and comprising at least one element selected from B, Si, P, Ge, Ti, V, Ni, Ta, Nb, Mo, W, Yb, Tm and Bi, the phosphor being shown by the formula (La 1−x−y−z Tb x Yb y Gd z )(Mg 1−a Mn a )Al 11 O 19 , wherein x is from 0 to 0.5, y is from 0.0001 to 0.1, z is from 0.00001 to 0.1, and a is from 0 to 0.1.

6. A phosphor having a magnetoplumbite-type crystal structure and comprising at least one element selected from B, Si, P, Ge, Ti, V, Ni, Ta, Nb, Mo, W, Yb, Tm and Bi, the phosphor being shown by the formula (La 1−x−y−z Tb x Yb y Gd z )(Mg 1−a−b Mn a Ti b )Al 11 O 19 , wherein x is from 0 to 0.5, y is from 0.0001 to 0.1, z is from 0.00001 to 0.1, a is from 0 to 0.1, and b is from 0.00001 to 0.03.

7. A phosphor having a magnetoplumbite-type crystal structure and comprising at least one element selected from B, Si, P, Ge, Ti, V, Ni, Ta, Nb, Mo, W, Yb, Tm and Bi, the phosphor being shown by the formula (La 1−x−y Eu x Tm y )Mg 1−x Al 11+x O 19 , wherein x is from 0.001 to 0.15 and y is from 0.0001 to 0.1.

8. A phosphor having a magnetoplumbite-type crystal structure and showing by the formula (La 1−x−y−z Tb x Yb y Ln z )(Mg 1−a−b M a M′ b )Al 11 O 19+d , wherein x is from 0 to 0.5, y is from 0.0001 to 0.1, z is from 0.00001 to 0.1, a is from 0 to 0.1, b is from 0.00001 to 0.03, d is from —1 to 1, Ln is a rare-earth element or an element that can form a cation with an ionic radius of 1 to 1.4 angstroms, and M and M′ are each an element that can form a cation with an ionic radius of 0.7 to 1 angstrom, which is typified by a 3d transition metal.

9. A display device using a green phosphor as set forth in claim 8 .

10. A gas discharge device using a green phosphor as set forth in claim 8 .

Assignments (8)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2018
From: HITACHI MAXELL, LTD.
To: MAXELL, LTD.
Reel/Frame 045142/0208 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 8, 2014
From: HITACHI CONSUMER ELECTRONICS CO., LTD.; HITACHI CONSUMER ELECTRONICS CO, LTD.
To: HITACHI MAXELL, LTD.
Reel/Frame 033694/0745 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2013
From: HITACHI PLASMA PATENT LICENSING CO., LTD.
To: HITACHI CONSUMER ELECTRONICS CO., LTD.
Reel/Frame 030074/0077 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2008
From: HITACHI LTD.
To: HITACHI PLASMA PATENT LICENSING CO., LTD.
Reel/Frame 021785/0512 →
TRUST AGREEMENT REGARDING PATENT RIGHTS, ETC. DATED JULY 27, 2005 AND MEMORANDUM OF UNDERSTANDING REGARDING TRUST DATED MARCH 28, 2007 Recorded Apr 13, 2007
From: HITACHI LTD.
To: HITACHI PLASMA PATENT LICENSING CO., LTD.
Reel/Frame 019147/0847 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2005
From: FUJITSU LIMITED
To: HITACHI, LTD.
Reel/Frame 017105/0910 →
CORRECTIVE ASSIGNMENT TO CORRECT THE FOURTH ASSIGNOR NAME, PREVIOUSLY RECORDED ON REEL 016429 FRAME 0469. Recorded Sep 27, 2005
From: FUKUTA, SHINYA; ONIMARU, TOSHIAKI; MISAWA, TOMONARI; SAKATA, HIRONORI
To: FUJITSU LIMITED
Reel/Frame 016843/0731 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2005
From: FUKUTA, SHINYA; ONIMARU, TOSHIAKI; MISAWA, TOMONARI; SAKATA, HINONORI
To: FUJITSU LIMITED
Reel/Frame 016429/0469 →