Method for manufacturing thin film transistor
View Patent ↗Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irradiated with a laser beam to crystallize the semiconductor film. In this case, a ratio between quasi-fermi level of the single crystal material within one of transistor formation regions used to form transistors of different conductivity types and quasi-fermi level of the single crystal material within the other thereof is made to be between 0.5:1 and 2.0:1. Thus, transistors of different conductivity types are formed in the crystallized semiconductor film.
1. A method for manufacturing a thin film transistor comprising, in order, the steps of:
depositing a non-single crystal semiconductor film on an insulting substrate;
introducing at least one dopant into all regions of said non-single crystal semiconductor film;
irradiating, for the first time, said non-single crystal semiconductor film with a laser beam to convert a non-single crystal material of said non-single crystal semiconductor film into a crystallized semiconductor film; and
forming transistors of different conductivity types in said crystallized semiconductor film, and
wherein introducing at least one dopant into all regions of said non-single crystal semiconductor film includes introducing said at least one dopant into all regions of said non-single crystal semiconductor film through a protective film formed on said non-single crystal semiconductor film and wherein irradiating said non-single crystal semiconductor film with a laser beam includes removing said protective film from said non-single crystal semiconductor film and then irradiating said non-single crystal semiconductor film with said laser beam.
2. The method for manufacturing a thin film transistor according to claim 1 , wherein introducing at least one dopant into all regions of said non-single crystal semiconductor film includes introducing dopant atoms of one conductivity type into said non-single crystal semiconductor film corresponding to one of said transistors of different conductivity types, and subsequently, introducing dopant atoms of the other conductivity type into said non-single crystal semiconductor film corresponding to the other of said transistors of different conductivity types.
3. The method for manufacturing a thin film transistor according to claim 1 , wherein introducing at least one dopant into all regions of said non-single crystal semiconductor film includes introducing dopant atoms of any one of two conductivity types into all regions of said non-single crystal semiconductor film.
4. The method for manufacturing a thin film transistor according to claim 1 , further comprising the step of subjecting said crystallized semiconductor film to heat processing with temperatures in the range of 290 to 340 degrees C. after a final plasma processing to form a protective insulation film covering said transistors.
5. The method for manufacturing a thin film transistor according to claim 4 , wherein said heat processing is carried out in an inactive gas atmosphere.
6. A method for manufacturing a thin film transistor comprising, in order, the steps of:
depositing a non-single crystal semiconductor film on an insulting substrate;
introducing a first dopant, of a first conductivity type, into substantially all regions of said non-single crystal semiconductor film;
masking a surface of said non-single crystal semiconductor film to delineate first and second type transistor regions to be formed on said non-single crystal semiconductor film;
introducing a second dopant, of opposite conductivity type to said first dopant, into said non-single crystal semiconductor film, said second dopant being introduced in regions of said non-single crystal semiconductor film that are exposed by
openings in said mask;
removing said mask; and
irradiating, for the first time, said non-single crystal semiconductor film with a laser beam to convert a non-single crystal material of said non-single crystal semiconductor film into a crystallized semiconductor film; and
forming transistors of first and second conductivity types in said crystallized semiconductor film.
7. The method as recited in claim 6 , wherein a ratio between quasi-fermi level of said non-single crystal semiconductor film corresponding to one of transistor formation regions of different conductivity types and quasi-fermi level of said non-single crystal semiconductor film corresponding to the other of said transistor formation regions of different conductivity types is between 0.5:1 and 2.0:1.
8. A method for manufacturing a thin film transistor comprising, in order, the steps of:
depositing a non-single crystal semiconductor film on an insulting substrate;
introducing a first dopant, of a first conductivity type, into substantially all regions of said non-single crystal semiconductor film;
masking a surface of said non-single crystal semiconductor film to delineate first and second type transistor regions to be formed on said non-single crystal semiconductor film;
introducing a second dopant, of opposite conductivity type to said first dopant, into said non-single crystal semiconductor film, said second dopant being introduced in regions of said non-single crystal semiconductor film that are exposed by openings in said mask;
removing said mask; and
irradiating said non-single crystal semiconductor film with a laser beam to convert a non-single crystal material of said non-single crystal semiconductor film into a crystallized semiconductor film; and
forming transistors of first and second conductivity types in said crystallized semiconductor film.
9. The method as recited in claim 8 wherein a ratio between quasi-fermi level of said non-single crystal semiconductor film corresponding to one of transistor formation regions of different conductivity type and quasi-fermi level of said non-single crystal semiconductor film to the other of said transistor formation regions of different conductivity types is between 0.5:1 and 2.0:1.