Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.
1. A III–V nitride semiconductor light emitting element comprising:
an active layer made of a semiconductor and generating light;
a first semiconductor layer of a first conductivity type on a principal surface of the active layer; and
a second semiconductor layer of a second conductivity type provided on a back surface of the active layer and having a back surface with a two-dimensional periodic structure, the semiconductor light emitting element outputting light generated in the active layer from the back surface of the second semiconductor layer,
wherein, when a period of the two-dimensional periodic structure is Λ, a peak wavelength of the light generated in the active layer is λ, and a refractive index of the first semiconductor layer is N, and 0.63λ/N<Λ<8.8λ/N is satisfied.
2. The semiconductor light emitting element of claim 1 , further comprising: a first electrode provided on a principal surface of the first semiconductor layer and having a reflectivity of 80% or more with respect to light at a peak wavelength of all the light generated in the active layer; and a second electrode provided on a region of the back surface of the second semiconductor layer in which the two-dimensional periodic structure is not formed.
3. The semiconductor light emitting element of claim 2 , wherein the first electrode is a metal film containing at least one of an Au film, a Pt film, a Cu film, an Ag film, an Al film, and a Rh film.
4. The semiconductor light emitting element of claim 2 , wherein a metal layer having a thickness of 10 μ.m or more is further provided in contact relation with the first electrode.
5. The semiconductor light emitting element of claim 4 , wherein the metal layer is composed of one metal selected from the group consisting of Au, Cu, and Ag.
6. The semiconductor light emitting element of claim 1 , wherein a vertical cross section of the two-dimensional periodic structure is configured as a quadrilateral wave.
7. The semiconductor light emitting element of claim 1 , wherein a vertical cross section of the two-dimensional periodic structure is configured as a triangular wave.
8. A III–V nitride semiconductor light emitting element comprising:
an active layer made of a semiconductor and generating light;
a first semiconductor layer of a first conductivity type on a principal surface of the active layer; and
a second semiconductor layer of a second conductivity type provided on a back surface of the active layer and having a back surface with a two-dimensional periodic structure, the semiconductor light emitting element outputting light generated in the active layer from the back surface of the second semiconductor layer,
wherein, when a height of the two-dimensional periodic structure is h, a peak wavelength of the light generated in the active layer is λ, a refractive index of a portion surrounding the semiconductor light emitting element is n 1 , and a refractive index of the second semiconductor layer is n 2 , h is an integral multiple of λ/{2(n 2 −n 1 )}.
9. A III–V nitride semiconductor light emitting element comprising:
a substrate which transmits light;
a first semiconductor layer on a principal surface of the substrate and having a principal surface formed with a two-dimensional periodic structure;
a second semiconductor layer of a first conductivity type provided on the principal surface of the first semiconductor layer;
an active layer provided on a principal surface of the second semiconductor layer, made of a semiconductor, and generating light; and
a third semiconductor layer of a second conductivity type provided on a principal surface of the active layer, the semiconductor light emitting element outputting the light generated in the active layer from a back surface of the substrate,
wherein, when a period of the two-dimensional periodic structure is Λ, a peak wavelength of the light generated in the active layer is λ, and a refractive index of the first semiconductor layer is N, and 0.63λ/N<Λ<8.8λ/N is satisfied.
10. The semiconductor light emitting element of claim 9 , wherein a material composing the second semiconductor layer is not buried in the two-dimensional periodic structure.
11. The semiconductor light emitting element of claim 9 , further comprising:
a first electrode provided on a principal surface of the third semiconductor layer and having a reflectivity of 80% or more with respect to light at a peak wavelength of all the light generated in the active layer; and
a second electrode provided on the principal surface of the third semiconductor layer.
12. The semiconductor light emitting element of claim 11 , wherein the first electrode is a metal film containing at least one of an Au film, a Pt film, a Cu film, an Ag film, an Al film, and a Rh film.
13. The semiconductor light emitting element of claim 9 , wherein a vertical cross section of the two-dimensional periodic structure is configured as a quadrilateral.
14. The semiconductor light emitting element of claim 9 , wherein a vertical cross section of the two-dimensional periodic structure is configured as a triangular wave.
15. The semiconductor light emitting element of claim 9 , wherein a material of the substrate is one selected from the group consisting of GaAs, InP, Si, SiC, AlN, and sapphire.
16. The semiconductor light emitting element of claim 9 , wherein the back surface of the substrate is rough and, when a peak wavelength of the light generated in the active layer is .lambda., an autocorrelation distance T in the back surface of the substrate satisfies 0.5λ/N<T<20λ/N and a height distribution D in a perpendicular direction satisfies 0.5λ/N<D<20λ/N.
17. A III–V nitride semiconductor light emitting element comprising:
a substrate which transmits light;
a first semiconductor layer on a principal surface of the substrate and having a principal surface formed with a two-dimensional periodic structure;
a second semiconductor layer of a first conductivity type provided on the principal surface of the first semiconductor layer;
an active layer provided on a principal surface of the second semiconductor layer, made of a semiconductor, and generating light; and
a third semiconductor layer of a second conductivity type provided on a principal surface of the active layer, the semiconductor light emitting element outputting the light generated in the active layer from a back surface of the substrate,
wherein, when a height of the two-dimensional periodic structure is h, a peak wavelength of the light generated in the active layer is λ, a refractive index of a portion surrounding the semiconductor light emitting element is n 1 , and a refractive index of the first semiconductor layer is n 2 , h is an integral multiple of λ/{2(n 2 −n 1 )}.
18. A III–V nitride semiconductor light emitting device comprising:
a semiconductor light emitting element having a first semiconductor layer of a first conductivity type, an active layer provided on a back surface of the first semiconductor layer, made of a semiconductor, and generating light, and a second semiconductor layer of a second conductivity type provided on a back surface of the active layer and having a back surface formed with a two-dimensional periodic structure, the semiconductor light emitting element outputting the light generated in the active layer from the back surface of the second semiconductor layer;
a mounting substrate on which the semiconductor light emitting element is mounted; and
a molding resin formed into a hemispherical configuration to mold the semiconductor light emitting element,
wherein, when a period of the two-dimensional periodic structure is Λ, a peak wavelength of the light generated in the active layer is λ, and a refractive index of the second semiconductor layer is N, and 0.63λ/N<Λ<8.8λ/N is satisfied.