Semiconductor device and method for fabricating the same
View Patent ↗A semiconductor device includes: a gate electrode formed on a silicon substrate; source/drain regions formed at both sides of the gate electrode in the silicon substrate; and a silicide layer formed on the source/drain regions. The silicide layer includes a first silicide layer mainly made of a metal silicide having a formation enthalpy lower than that of NiSi and a second silicide layer formed on the first silicide and made of Ni silicide.
1. A method for fabricationg a semiconductor device, the method comprising the steps of:
forming a gate electrode on a silicon substrate;
forming source/drain regions at both sides of the gate electrode in the silicon substrate; and
forming a silicide layer with a multilayer structure on the soure/drain regions,
wherein in the step of forming the silicide layer, a first silicide layer mainly made of a metal silicide having a formation enthalpy lower than that of NiSi is formed on the source/drain regions, and then a second silicide layer made of Ni silicide is formed on the first silicide layer.
2. A method for fabricating a semiconductor device , the steps of:
forming a gate electrode on a silicon substrate;
forming source/drain regions at both sides of the gate electrode in the silicon substrate; and
forming a silicide layer with a multilayer structure on the source/drain regions,
wherein in the step of forming the silicide layer, a metal capable of forming a metal silicide having a formation enthalpy lower than that of NiSi is introduced by ion implantation in the source/drain regions, then a Ni silicide film is formed on the source/drain regions, and then heat treatment is performed, thereby forming a first silicide layer which is an alloy layer made of Ni silicide and a metal silicide having a formation enthalpy lower than that of NiSi on the source/drain regions and also forming a second silicide layer made of Ni silicide on the first silicide layer.
3. A method for fabricating a semiconductor device, the method comprising the steps of:
forming a gate electrode on a silicon substrate;
forming source/drain regions at both sides of the gate electrode in the silicon substrate; and
forming a silicide layer with a multilayer structure on the source/drain regions,
wherein in the step of forming the silicide layer, a Ni silicide film is formed on the source/drain regions, then a metal capable of forming a metal silicide having a formation enthalpy lower than that of NiSi is introduced by ion implantation in at least a lower portion of the Ni silicide film and the Ni silicide film is changed into an amorphous state, and then the amorphous Ni silicide film is recrystallized by heat treatment, thereby forming a first silicide layer which is an alloy layer made of Ni silicide and a metal silicide having a formation enthalpy lower than that of NiSi on the source/drain regions and also forming a second silicide layer made of Ni silicide on the first silicide layer.
4. The method of claim 1 , wherein the metal silicide having a formation enthalpy lower than that of NiSi is a silicide made from a material selected from the group consisting of Hf, Zr, Mo, Ta and V.
5. The method of claim 2 , wherein the metal silicide having a formation enthalpy lower than that of NiSi is a silicide made from a material selected from the group consisting of Hf, Zr, Mo, Ta and V.
6. The method of claim 3 , wherein the metal silicide having a formation enthalpy lower than that of NiSi is a silicide made from a material selected from the group consisting of Hf, Zr, Mo, Ta and V.