Etch resistant wafer processing apparatus and method for producing the same
View Patent ↗A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.
1. A wafer processing apparatus comprising a platform for placement of an object of various sizes to be processed, the platform comprising: a base substrate comprising at least one of an oxide, nitride, oxynitride of B, Si, Ga, and combinations thereof; a film electrode deposited upon the base substrate; at least a coating layer disposed on the film electrode, the coating layer comprising at least one of a nitride, carbide, carbonitride, oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof; wherein the film electrode has a coefficient of thermal expansion (CTE) in a range of 0.75 to 1.25 times that of the base substrate and the coating layer respectively; and wherein the base substrate is electrically insulating, and wherein the base substrate has a volume resistivity greater than 10 8 Ω-cm at 25° C.
2. The wafer processing apparatus of claim 1 , wherein the base substrate has a volume resistivity >10 10 Ω-cm at 25° C.
3. The wafer processing apparatus of claim 1 , wherein the base substrate comprises a sintered ceramic material containing 45 to 5% by weight of AIN to 55 to 95% by weight of BN.
4. The wafer processing apparatus of claim 1 , wherein the film electrode comprises at least one of molybdenum, tungsten, ruthenium, and alloys thereof.
5. The wafer processing apparatus of claim 1 , wherein the coating layer comprises aluminum nitride.
6. The wafer processing apparatus of claim 1 , wherein the coating layer has a CTE ranging from 2.0×10 −6 /K to 10×10−6/K in a temperature range of 25 to 1000° C.
7. The wafer processing apparatus of claim 1 , wherein the film electrode has a CTE of 0.90 to 1.10 times that the base substrate and the coating layer, respectively.
8. The wafer processing apparatus of claim 1 , wherein the base substrate has a CTE ranging from 2.0×10 −6 /K to 10×10−6/K in a temperature range of 25 to 1000° C.
9. The wafer processing apparatus of claim 1 , wherein the coating layer is deposited on the film electrode by at least one of expanding thermal plasma (ETP), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition, metal organic chemical vapor deposition, metal organic vapor phase epitaxy, sputtering, electron beam and plasma spray.
10. The wafer processing apparatus of claim 1 , wherein the film electrode is deposited onto the electrically insulating layer by at least one of screen-printing, spin coating, plasma spray, spray pyrolysis, reactive spray deposition, sol-gel, combustion torch, electric arc, ion plating, ion implantation, sputtering deposition, laser ablation, evaporation, electroplating, and laser surface alloying.
11. The wafer processing apparatus of claim 10 , wherein the film electrode is deposited on the coating layer by at least one of screen-printing and plasma spray.
12. A method for producing a wafer processing apparatus, comprising the steps of: providing a base substrate comprising at least one of an oxide, nitride, carbide, carbonitride, oxynitride of B, Si, Ga, and combinations thereof, the base substrate having volume resistivity >10 10 Ω-cm at 25° C.; depositing a film electrode onto the base substrate, the film electrode having a CTE ranging from 0.75 to 1.25 of the base substrate layer; overlaying the film electrode with a coating film layer having a CTE ranging from 0.75 to 1.25 of the film electrode.
13. The method of claim 12 , wherein the deposition of the film electrode onto the base substrate is by at least one of screen-printing, spin coating, plasma spray, spray pyrolysis, reactive spray deposition, sol-gel, combustion torch, electric arc, ion implantation, sputtering deposition, laser ablation, evaporation, electroplating, and laser surface alloying.
14. The method of claim 13 , wherein the deposition of the coating film layer onto the film electrode layer is by at least one of expanding thermal plasma, plasma enhanced chemical vapor deposition, metal organic chemical vapor deposition, metal organic vapor phase epitaxy, sputtering, ion plating, electron beam and plasma spray.