IP Library › Granted Patent US 7,592,129
Granted Patent B2
US 7,592,129 · App. 11/366,385 · Granted Sep 22, 2009

Method for forming photoresist pattern and method for manufacturing semiconductor device

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Quick Facts
Patent No.
US 7,592,129
App. No.
11/366,385
Granted
Sep 22, 2009
Kind
B2
Abstract

With the objective of suppressing resist pattern collapse generated at dry etching, energy rays are applied to a photoresist structure including an antireflection film provided on a base and a resist pattern brought into contact with the antireflection film, the resist pattern being a chemical-amplification photoresist provided on the antireflection film. Thereafter, the photoresist structure is heated at a heating temperature greater than or equal to a glass transition point of the resist pattern and less than a melting point thereof.

Claims (11)

1. A method for forming a photoresist pattern, comprising:

preparing a photoresist structure including an antireflection film provided over a base, and a resist pattern brought into contact with the antireflection film and comprised of a chemical-amplification photoresist provided over the antireflection film;

applying energy rays; and

thereafter heating the photoresist structure at a heating temperature greater than or equal to a glass transition point of the resist pattern and less than a melting point thereof,

the resist pattern and the antireflection film bridge-react with each other responsive to said applying waves and said heating.

2. The method according to claim 1 , wherein the heating is performed at a temperature ranging from over 150° C. to under 360° C.

3. The method according to claim 1 , wherein a positive-working chemical-amplification photoresist is used as the chemical-amplification photoresist.

4. The method according to claim 1 , wherein said applying energy rays is performed using ultraviolet radiation having an arbitrary single wavelength in a wavelength range from 250 to 450 nm.

5. The method according to claim 1 , wherein said applying energy rays is performed using ultraviolet radiation having a continuous wavelength extending over a wavelength range from 250 to 450 nm.

6. The method according to claim 1 , wherein said applying energy rays is performed using an electron beam.

7. A method for manufacturing a semiconductor device, including the method for forming a photoresist pattern of claim 1 , further comprising dry etching the base with the photoresist structure as a mask after the heating.