Method for producing semiconductor devices that includes forming a copper film in contact with a ruthenium film
Provided is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, a p , of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, a n , of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|a p −a n |/a p }×100=A (%) and the difference between the long side, b p , of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, b n , of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|b p −b n |/b p }×100=B (%) satisfy an inequality of {A+B×(a p /b p )}<13. In this, the diffusion of the conductor film is retarded.
1. A method for producing semiconductor devices, which comprises:
forming a ruthenium (Ru) film on one primary surface of a semiconductor substrate;
forming a first copper (Cu) film in contact with the ruthenium (Ru) film, by sputtering; and
forming a second copper (Cu) film in contact with the first copper (Cu) film, by plating or chemical vapor deposition (CVD).
2. A method for producing semiconductor devices according to claim 1 , which further comprises:
forming a plug in contact with the ruthenium (Ru) film, wherein said plug is of ruthenium (Ru).
3. A method for producing semiconductor devices according to claim 2 , which further comprises:
forming a barrier metal in contact with both the plug and the ruthenium (Ru) film, wherein the barrier metal is of titanium nitride (TiN).
4. A method for producing semiconductor devices according to claim 1 , which further comprises:
forming a second ruthenium (Ru) film on the first copper (Cu) film.
5. A method for producing semiconductor devices, which comprises:
forming a ruthenium (Ru) film on one primary surface of a semiconductor substrate by sputtering;
forming a first copper (Cu) film in contact with the ruthenium (Ru) film, by sputtering; and
forming a second copper (Cu) film in contact with the first copper (Cu) film, by plating.
6. A method for producing semiconductor devices according to claim 5 , which further comprises:
forming a plug in contact with the ruthenium (Ru) film, wherein said plug is of ruthenium (Ru).
7. A method for producing semiconductor devices according to claim 6 , which further comprises:
forming a barrier metal in contact with both the plug and the ruthenium (Ru) film, wherein the barrier metal is of titanium nitride (TiN).
8. A method for producing semiconductor devices according to claim 5 , which further comprises:
forming a second ruthenium (Ru) film on the second copper (Cu) film.
9. A method for producing semiconductor devices, which comprises:
forming a ruthenium (Ru) film on one primary surface of a semiconductor substrate, by sputtering;
forming a first copper (Cu) film in contact with the ruthenium (Ru) film, by sputtering; and
forming a second copper (Cu) film in contact with the first copper (Cu) film, by chemical vapor deposition (CVD).
10. A method for producing semiconductor devices according to claim 9 , which further comprises:
forming a plug in contact with the ruthenium (Ru) film, wherein said plug is of ruthenium (Ru).
11. A method for producing semiconductor devices according to claim 10 , which further comprises:
forming a barrier metal in contact with both the plug and the ruthenium (Ru) film, wherein the barrier metal is of titanium nitride (TiN).
12. A method for producing semiconductor devices according to claim 9 , which further comprises:
forming a second ruthenium (Ru) film on the second copper (Cu) film.