Image display and manufacturing method of the same
View Patent ↗An image display has gate-lines and signal-lines in a matrix shape, and has thin film transistors each having: an island-shaped semiconductor layer having source region, drain region, and channel region sandwiched between them; a first insulation film formed between the semiconductor layer and a gate electrode of the same layer as that of the gate-lines; an interlayer insulation film formed above the semiconductor layer; and a source electrode and a drain electrode existing in the same layer as that of the signal-lines. Each capacitor has: a storage electrode of the same layer as that of the gate-lines; an insulation film formed on the storage electrode and being in contact therewith; and an electrode formed on the insulation film and being in contact therewith and existing in the same layer as that of the signal-lines.
1. An image display having a plurality of thin film transistors and a plurality of capacitors on a substrate, wherein
a plurality of gate-lines and a plurality of signal-lines which cross said plurality of gate-lines in a matrix shape are formed on said substrate,
each of said thin film transistors comprising: an island-shaped semiconductor layer having a source region, a drain region, and a channel region sandwiched between them; a first insulation film formed between said island-shaped semiconductor layer and a gate electrode of the same layer as that of said gate-lines; an interlayer insulation film formed above said island-shaped semiconductor layer; and a source electrode and a drain electrode which are come into contact with said source region and said drain region via an opening formed in said interlayer insulation film and which exist in the same layer as that of the signal-lines, and
each of said capacitors comprising: a storage electrode of the same layer as that of said gate-lines; a second insulation film formed on said storage electrode so as to be in contact therewith; and an electrode which is formed on said second insulation film so as to be in contact therewith via an opening formed in said interlayer insulation film and which exists in the same layer as that of said signal-lines,
wherein said first insulation film is formed so as to cover said substrate, and said second insulation film is patterned to be formed to be in contact with an upper surface and side surfaces of said storage electrode and an upper surface of said first insulation film, a central portion of said capacitor reveals a layer structure of an electrode having same layers as layers of said first insulation film/said storage electrode/said second insulation film/said signal line as viewed from said substrate, a peripheral portion of said capacitor reveals a layer structure of an electrode having same layers as layers of said first insulation film/said storage electrode/said second insulation film/said interlayer insulation film/said signal line as viewed from said substrate, said source region and said drain region of said thin film transistor each reveal a layer structure of an electrode having same layers as layers of said island-shaped semiconductor layer/said first insulation film/said interlayer insulation film/said signal line as viewed from said substrate, and said interlayer insulation film is formed to be in contact with said first insulation film in said source region and said drain region of said thin film transistor, and
wherein said first insulation film and said second insulation film are made of a same high dielectric constant material.
2. A display according to claim 1 , wherein a relative permittivity of said second insulation film is higher than that of said first insulation film, and an etching rate of said second insulation film is lower than that of said first insulation film.
3. A display according to claim 1 , wherein said second insulation film is formed in an upper portion and a side portion of said gate electrode.
4. A display according to claim 1 , wherein said first insulation film is a laminate film of a silicon oxide film and a high dielectric constant film.
5. A display according to claim 1 , wherein said capacitor is a parallel capacitor comprising:
a first capacitor constructed by said island-shaped semiconductor layer, said first insulation film, and said storage electrode; and
a second capacitor constructed by said storage electrode, said second insulation film which is formed on said storage electrode and whose relative permittivity is higher than that of said first insulation film, and said electrode which is directly formed on said second insulation film and which exists in the same layer as that of said signal-lines.
6. A display according to claim 1 , wherein a frame memory constructed by a capacitor and a switch is formed on said substrate in order to temporarily store image data.
7. A display according to claim 6 , wherein said frame memory is provided in a pixel.
8. A display according to claim 1 , wherein said island-shaped semiconductor layer is an island-shaped polysilicon layer.
9. A display according to claim 1 , wherein said first insulation film and said interlayer insulation film are made of silicon oxide.