Semiconductor structure of a high side driver and method for manufacturing the same
View Patent ↗A semiconductor structure of a high side driver and method for manufacturing the same is disclosed. The semiconductor of a high side driver includes an ion-doped junction and an isolation layer formed on the ion-doped junction. The ion-doped junction has a number of ion-doped deep wells, and the ion-doped deep wells are separated but partially linked with each other.
1. A semiconductor structure of a high side driver, comprising:
an ion-doped junction, having an ion-doped substrate and a plurality of ion-doped deep wells formed in the ion-doped substrate, wherein the ion-doped deep wells are separated but have partial and physical connection with each other at a region within the ion-dope substrate; and
an isolation layer, formed on the ion-doped junction.
2. The semiconductor structure according to claim 1 , further comprising a conductive capacitor structure formed on the isolation layer.
3. The semiconductor structure according to claim 2 , wherein the ion-doped substrate is a P-substrate and the ion-doped deep wells are N-wells formed in the P-substrate.
4. The semiconductor structure according to claim 2 , wherein the breakdown voltage of the ion-doped junction is determined by the distance between the ion-doped deep wells.
5. The semiconductor structure according to claim 2 , wherein the ion-doped junction further comprises at least an ion-doped well in each of the ion-doped deep wells and the ion-doped well has a complementary ion-doped type to the ion-doped deep well.
6. The semiconductor structure according to claim 5 , wherein the breakdown voltage of the ion-doped junction is determined by the shape and relative position of the ion-doped well in the ion-doped deep well.
7. The semiconductor structure according to claim 5 , wherein the doping concentration of the ion-doped well is from 3.3E17 cm-3 to 1E19 cm-3.
8. The semiconductor structure according to claim 2 , wherein the ion-doped junction further comprises a heavy ion-doped region having the same ion-doped type with the ion-doped deep wells, and the heavy ion-doped region is connected to a highest potential node of the conductive capacitor structure.
9. The semiconductor structure according to claim 2 , wherein the depth of the ion-doped deep wells is directly proportional to a high voltage applied to the conductive capacitor structure.
10. The semiconductor structure according to claim 9 , wherein the depth of the ion-doped deep well is from 2 um to 10 um.
11. The semiconductor structure according to claim 2 , wherein the isolation layer is an oxide layer.
12. The semiconductor structure according to claim 2 , further comprising a first dielectric layer formed between the conductive capacitor structure and the isolation layer.
13. The semiconductor structure according to claim 12 , wherein the conductive capacitor structure comprising:
a first metal layer, formed on the first dielectric layer;
a second dielectric layer, formed on the first metal layer; and
a plurality of separated second metal layers, formed on the second dielectric layer, wherein one of the second metal layers is connected to a high voltage and another one of the second metal layers is connected to a low voltage.
14. The semiconductor structure according to claim 13 , wherein the breakdown voltage of the ion-doped junction is determined by the position of the first metal layer relative to the ion-doped junction.
15. The semiconductor structure according to claim 2 , wherein the doping concentration of the ion-doped deep well is from 1.7E17 cm-3 to 8.3E18 cm-3.
16. The semiconductor structure according to claim 2 , wherein the ion-doped deep wells are partially linked to each other at an area near the isolation layer.
17. The semiconductor structure according to claim 2 , is applied to a power supply IC.