Wiring substrate, electronic device, electro-optical device, and electronic apparatus
View Patent ↗The invention achieves stable performance, such as low parasitic capacitance generated at conductive components. Components having a low dielectric constant of 4 or less are disposed on a base member. Functional films partitioned by the low-dielectric-constant components are also provided.
1. A wiring substrate, comprising:
a base;
a semiconductor film that is disposed above the base;
a gate insulating film that covers the semiconductor film;
a first interlayer insulating film that is disposed above the gate interlayer insulating film;
a second interlayer insulating film that is disposed above the first interlayer insulating film; and
a low-refractive-index layer that is disposed between the first interlayer insulating film and the second interlayer insulating film, a refractive index of the low-refractive index layer being lower than a refractive index of the base and the low-refractive-index layer including a silica aerogel.
2. A wiring substrate, comprising:
a base;
a transistor that has a semiconductor film and a gate insulating film;
a first interlayer insulating film that is disposed above the gate insulating film;
a second interlayer insulating film that is disposed above the first interlayer insulating film; and
a low-refractive-index layer that is disposed between the first interlayer insulating film and the second interlayer insulating film, a refractive index of the low-refractive index layer being lower than 1.54 and the low-refractive-index layer including a silica aerogel.
3. A wiring substrate, comprising:
a base;
a transistor that has a semiconductor film and a gate insulating film;
a first interlayer insulating film that is disposed above the gate insulating film;
a second interlayer insulating film that is disposed above the first interlayer insulating film;
a first electrode that is disposed above the second interlayer insulating film; and
a low-refractive-index layer that is disposed between the second interlayer insulating film and the first electrode, a refractive index of the low-refractive index layer being lower than 1.54 and the low-refractive-index layer including a silica aerogel.
4. A wiring substrate, comprising:
a base;
a transistor that has a semiconductor film and a gate insulating film;
a first interlayer insulating film that is disposed above the gate insulating film;
a second interlayer insulating film that is disposed above the first interlayer insulating film;
a first electrode that is disposed above the second interlayer insulating film; and
a low-refractive-index layer that is disposed between the second interlayer insulating film and the first electrode, a refractive index of the low-refractive index layer being lower than a refractive index of the base and the low-refractive-index layer including a silica aerogel.
5. The wiring substrate according to claim 4 ,
the low-refractive-index layer having a sealing property.
6. The wiring substrate according to claim 4 ,
a desiccant or a chemical absorbent being dispersed in the low-refractive-index layer.
7. The wiring substrate according to claim 4 ,
a refractive index of the low-refractive-index layer being lower than 1.45.
8. The wiring substrate according to claim 4 ,
the semiconductor film being connected to a drain electrode or a source electrode through a first contact hole formed in the gate insulating film and the first interlayer insulating film, and
the drain electrode or the source electrode being connected to the first electrode through a second contact hole formed in the second interlayer insulating film.
9. An electronic device, comprising:
a base;
a transistor that has a semiconductor film and a gate insulating film;
a first interlayer insulating film that is disposed above the gate insulating film;
a second interlayer insulating film that is disposed above the first interlayer insulating film;
a first electrode that is disposed above the second interlayer insulating film; and
a second electrode;
a functional film that is disposed between the first electrode and the second electrode; and
a first low-refractive-index layer that covers the second electrode, a refractive index of the first low-refractive index layer being lower than a refractive index of the base and the first low-refractive-index layer including a silica aerogel.
10. The electronic device according to claim 9 , further comprising:
a second low-refractive-index layer that is disposed between the first interlayer insulating film and the second interlayer insulating film.
11. The electronic device according claim 9 , further comprising:
a second low-refractive-index layer that is disposed between the first electrode and the second interlayer insulating film.
12. The electronic device according to claim 9 ,
the functional film including an electro-optical material.
13. An electronic apparatus comprising the electronic device according to claim 9 .
14. A wiring substrate, comprising:
a base;
a transistor that has a semiconductor film and a gate insulating film;
a first interlayer insulating film that is disposed above the gate insulating film;
a second interlayer insulating film that is disposed above the first interlayer insulating film; and
a first low-refractive-index layer that is disposed between the first interlayer insulating film and the second interlayer insulating film, a refractive index of the first low-refractive index layer being lower than a refractive index of the base and the first low-refractive-index layer including a silica aerogel.
15. The wiring substrate according to claim 14 ,
the first low-refractive-index having a sealing property.
16. The wiring substrate according to claim 14 ,
a desiccant or a chemical absorbent being dispersed in the first low-refractive-index layer.
17. The wiring substrate according to claim 14 ,
a refractive index of the first low-refractive-index layer being lower than 1.45.
18. The wiring substrate according to claim 14 , further comprising:
a first electrode that is disposed above the second interlayer insulating film; and
a second low-refractive-index layer that is disposed between the first electrode and the second interlayer insulating film, a refractive index of the second low-refractive-index layer being lower than a refractive index of the base.
19. The wiring substrate according to claim 14 ,
the semiconductor film being connected to a drain electrode or a source electrode through a contact hole formed in the gate insulating film and the first interlayer insulating film.
20. The wiring substrate according to claim 19 ,
the second interlayer insulating film covering the drain electrode or the source electrode.
21. The wiring substrate according to claim 19 ,
the first low-refractive-index layer covering the drain electrode or the source electrode.
22. An electronic device comprising:
the wiring substrate according to claim 14 ; and
a functional film.
23. The electronic device according to claim 22 , further comprising:
a first electrode,
a second electrode,
the functional film being disposed between the first electrode and the second electrode.
24. The electronic device according to claim 23 , further comprising:
a third low-refractive-index layer that covers the second electrode.