Solid-state imaging device
View Patent ↗Provided is a manufacturing method of a solid-state imaging device, which is able to realize a solid-state imaging device whose reflection prevention coating is even and that does not have image noise in case of adopting a spincoating method in applying a material of the reflection prevention coating onto microlenses of the solid-state imaging device. In the solid-state imaging device 1 according to the present invention, a barrier wall pattern 7 is formed, as a step alleviating structure, in dicing areas 5 X formed between adjacent imaging areas 9 . The barrier wall pattern 7 has a rectangular sectional form. With use of the barrier wall pattern 7 in the spincoating method, reflection prevention coating 8 is coated onto the microlenses 6 more evenly than in conventional cases.
1. A solid-state imaging device comprising:
a semiconductor substrate;
a group of light receiving devices provided on a surface of the semiconductor substrate;
an imaging area provided relative to the group of light receiving devices;
a plurality of microlenses provided above the light receiving devices respectively; and
at least one barrier wall pattern provided in at least part of a surrounding area of the imaging area,
wherein the barrier wall pattern is made of an organic material, a reflection prevention coating is provided over the microlenses and within a peripheral portion of the image area,
the barrier wall pattern has a first surface facing the semiconductor substrate, a second surface opposite the first surface, and a third surface adjacent to the first surface and second surface, and
the reflection prevention coating is in direct contact with the third surface.
2. The solid-state imaging device of claim 1 , wherein
the barrier wall pattern is in a rectangular formation and is composed of one or more walls in a form of a rectangle.
3. The solid-state imaging device of claim 1 , wherein
a top of the second surface of the barrier wall pattern is higher than a top of each of the microlenses.
4. The solid-state imaging device of claim 1 , wherein the organic material is made from a photosensitive material.
5. A solid-state imaging device comprising:
a semiconductor substrate;
a group of light receiving devices provided on a surface of the semiconductor substrate;
an imaging area relative to the group of light receiving devices;
a plurality of microlenses provided above the light receiving devices respectively; and
at least one barrier wall pattern provided in at least part of a surrounding area of the imaging area,
wherein the barrier wall pattern has a first surface facing the semiconductor substrate, a second surface opposite the first surface, and a third surface adjacent to the first surface and second surface; and
a coating provided over the microlenses such that the coating is in direct contact with the third surface of the barrier wall pattern.
6. The solid-state imaging device of claim 1 , wherein the third surface of the barrier wall pattern is perpendicular to the first surface of the barrier wall pattern.
7. The solid-state imaging device of claim 1 , wherein the reflection prevention coating is in contact with the microlenses.
8. The solid-state imaging device of claim 5 , wherein the third surface of the barrier wall pattern is perpendicular to the first surface of the barrier wall pattern.
9. The solid-state imaging device of claim 5 , wherein the coating is in contact with the microlenses.
10. The solid-state imaging device of claim 1 , wherein the imaging area has four corners, and
the barrier wall pattern is provided in the part of the surrounding area corresponding to the four corners of the imaging area.
11. The solid-state imaging device of claim 5 , wherein the imaging area has four corners, and
the barrier wall pattern is provided in the part of the surrounding area corresponding to the four corners of the imaging area.