Method for reducing the 2

1. A method for reducing a 2 nd order intermodulation level of a transconductor at a desired frequency, the transconductor comprising at least one transistor comprising a control electrode, an output electrode and a third electrode, the method comprising:

providing an input signal to the control electrode whose frequency spectrum contains two frequencies whose separation in frequency is equal to the desired frequency;

controlling a voltage on the third electrode to a reference voltage via a negative feedback loop with resistive damping, the negative feedback loop connecting the third electrode to the control electrode and having an open-loop gain greater than unity at the desired frequency; and

providing an output signal at the output electrode.

2. A method according to claim 1 , wherein the open-loop gain is greater than 10.

3. A method according to claim 1 , wherein the reference voltage comprises a DC voltage less than or equal to about 100 mV.

4. A method according to claim 1 , wherein the at least one transistor comprises a bipolar transistor comprising a base, a collector and an emitter; and wherein the control electrode corresponds to the base, the output electrode corresponds to the collector, and the third electrode corresponds to the emitter.

5. A transconducting device comprising:

at least one transistor comprising a control electrode for receiving an input signal whose frequency spectrum contains two different frequencies, an output electrode for delivering an output signal, and a third electrode; and

a feedback controller for feedback-controlling a voltage on the third electrode based upon a reference voltage, and comprising a negative feedback loop with resistive damping coupling the third electrode and the control electrode, and having an open-loop gain greater than unity at a frequency equal to a frequency separation between the two different frequencies.

6. A transconducting device according to claim 5 , wherein said negative feedback loop comprises a comparator having a first input connected to the third electrode, a second input connected to the voltage source, an output connected to the control electrode; and wherein the resistive damping comprises a resistor connected between ground and the first input of said comparator.

7. A transconducting device according to claim 5 , wherein the open-loop gain is greater than 10.

8. A transconducting device according to claim 5 , wherein the reference voltage comprises a DC voltage less than or equal to about 100 mV.

9. A transconducting device according to claim 5 , wherein said at least one transistor comprises a base, a collector and an emitter; and wherein the control electrode corresponds to the base, the output electrode corresponds to the collector, and the third electrode corresponds to the emitter.

10. A transconducting device according to claim 5 , wherein said at least one transistor comprises a pair of transistors forming a differential structure, said pair of transistors having their control electrodes connected together and their third electrodes connected together; and wherein said negative feedback loop connects the third electrodes to the control electrodes of said pair of transistors.

11. A receiver comprising:

a transconducting device comprising

at least one transistor comprising a control electrode for receiving an input signal whose frequency spectrum contains two different frequencies, an output electrode for delivering an output signal, and a third electrode, and

a feedback controller for feedback-controlling a voltage on the third electrode based upon a reference voltage, and comprising a negative feedback loop with resistive damping coupling the third electrode and the control electrode, and having an open-loop gain greater than unity at a frequency equal to a frequency separation between the two different frequencies;

a mixer coupled to the output electrode of said transconducting device; and

a load coupled between a power supply terminal and an output of said mixer.

12. A receiver according to claim 11 , wherein the open-loop gain is higher than 10.

13. A receiver according to claim 11 , wherein the reference voltage comprises a DC voltage less than or equal to about 100 mV.

14. A receiver according to claim 11 , wherein said transistor comprises a bipolar transistor, the control electrode corresponding to a base of said bipolar transistor, the output electrode corresponding to a collector of said bipolar transistor, and a third electrode corresponding to an emitter of said bipolar transistor.

15. A receiver according to claim 11 , wherein said at least one transistor comprises a pair of transistors forming a differential structure, said pair of transistors having their control electrodes connected and their third electrodes connected; and wherein said negative feedback loop (BCR) connects the third electrodes to the control electrodes of said pair of transistors.

16. A receiver according to claim 11 , wherein said transconducting device, said mixer and said load is configured to operate in a cellular mobile telephone.

17. A receiver according to claim 11 , wherein the voltage reference comprises ground.

18. A receiver according to claim 11 , wherein said mixer is coupled to the output electrode via a DC coupling.

19. A cellular mobile telephone comprising:

an antenna; and

a receiver coupled to said antenna and comprising

a transconducting device comprising

at least one transistor comprising a control electrode for receiving an input signal whose frequency spectrum contains two different frequencies, an output electrode for delivering an output signal, and a third electrode, and

a feedback controller for feedback-controlling a voltage on the third electrode based upon a reference voltage, and comprising a negative feedback loop with resistive damping coupling the third electrode and the control electrode, and having an open-loop gain greater than unity at a frequency equal to a frequency separation between the two different frequencies;

a mixer coupled to the output electrode of said transconducting device; and

a load coupled between a power supply terminal and an output of said mixer.

20. A cellular mobile telephone according to claim 19 , wherein the open-loop gain is higher than 10.

21. A cellular mobile telephone according to claim 19 , wherein the reference voltage comprises a DC voltage less than or equal to about 100 mV.

22. A cellular mobile telephone according to claim 19 , wherein said transistor comprises a bipolar transistor, the control electrode corresponding to a base of said bipolar transistor, the output electrode corresponding to a collector of said bipolar transistor, and a third electrode corresponding to an emitter of said bipolar transistor.

23. A cellular mobile telephone according to claim 19 , wherein said at least one transistor comprises a pair of transistors forming a differential structure, said pair of transistors having their control electrodes connected and their third electrodes connected; and wherein said negative feedback loop connects the third electrodes to the control electrodes of said pair of transistors.

24. A cellular mobile telephone according to claim 19 , wherein the voltage reference comprises ground.

25. A cellular mobile telephone according to claim 19 , wherein said mixer is coupled to the output electrode via a DC coupling.