Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present invention is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present invention is a photodiode array having PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.
1. A photodiode comprising:
a substrate with at least a front side and a back side;
at least one PN-junction on the front side;
at least one PN-junction on the back side; and
at least one conduit for forming an electrical connection from a PN-junction on the front side of the substrate to a PN-junction on the back side of the substrate, wherein the conduit comprises a) a p+ dopant layer and b) a polysilicon or polyimide filling, wherein said photodiode is manufactured from a silicon wafer having a thickness ranging from 0.210-0.260 mm and n-type conductivity, wherein said photodiode is divided into a front-side region and a back side region, wherein each of said front side region and said back side region comprise at least two doped diffusion regions, and wherein at least one doped diffusion region has a depth of approximately 1 μm.
2. A photodiode comprising:
a substrate with at least a front side and a back side;
at least one PN-junction on the front side;
at least one PN-junction on the back side; and
at least one conduit for forming an electrical connection from a PN-junction on the front side of the substrate to a PN-junction on the back side of the substrate, wherein the conduit comprises a) a p+ dopant layer and b) a polysilicon or polyimide filling, wherein said photodiode is manufactured from a silicon wafer having a thickness ranging from 0.210-0.260 mm and n-type conductivity, wherein said photodiode is divided into a front-side region and a back side region, wherein each of said front side region and said back side region comprise at least two doped diffusion regions, and wherein at least one doped diffusion regions has a depth of approximately 0.5 μm.
3. The photodiode of claim 1 wherein at least one of said doped diffusion regions in the back side region is in electrical communication with a metallic area to form at least one back side cathode.
4. The photodiode of claim 3 wherein an inner edge of said cathode and said conduit are separated by a gap of approximately 0.060 mm.
5. The photodiode of claim 3 wherein said doped diffusion region in the back side region in electrical communication with a metallic area to form at least one back side cathode is an n-type doped diffusion region.
6. The photodiode of claim 1 wherein at least one of said doped diffusion regions in the back side region is in electrical communication with a metallic area to form at least one back side anode.
7. The photodiode of claim 6 wherein said doped diffusion region in the back side region in electrical communication with a metallic area to form at least one back side anode is an p-type doped diffusion region.
8. A photodiode comprising:
a substrate with at least a front side and a back side;
at least one PN-junction on the front side;
at least one PN-junction on the back side; and
at least one conduit for forming an electrical connection from a PN-junction on the front side of the substrate to a PN-junction on the back side of the substrate, wherein the conduit comprises a) a p+ dopant layer and b) a polysilicon or polyimide filling, wherein said photodiode is manufactured from a silicon wafer having a thickness ranging from 0.210-0.260 mm and n-type conductivity, wherein said photodiode is divided into a front-side region and a back side region, wherein each of said front side region and said back side region comprise at least two doped diffusion regions, wherein one of said at least two doped regions has a p-type conductivity and one of said at least two doped regions has an n-type conductivity, and wherein said p-type conductivity doped region and said n-type conductivity doped region are separated by a gap of approximately 0.125 mm.
9. The photodiode of claim 8 wherein said conduit has a diameter of approximately 0.020 mm.
10. A photodiode comprising:
a substrate with at least a front side and a back side;
at least one PN-junction on the front side;
at least one PN-junction on the back side; and
at least one conduit for forming an electrical connection from a PN-junction on the front side of the substrate to a PN-junction on the back side of the substrate, wherein the conduit comprises a) a p+ dopant layer and b) a polysilicon or polyimide filling, wherein said photodiode is manufactured from a silicon wafer having a thickness ranging from 0.210-0.260 mm and n-type conductivity, wherein said photodiode is divided into a front-side region and a back side region, wherein each of said front side region and said back side region comprise at least two doped diffusion regions, wherein at least one of said doped diffusion regions in the back side region is in electrical communication with a metallic area to form at least one back side cathode, and wherein an inner edge of said cathode and said conduit are separated by a gap of approximately 0.060 mm.
11. The photodiode of claim 2 wherein at least one of said doped diffusion regions in the back side region is in electrical communication with a metallic area to form at least one back side cathode.
12. The photodiode of claim 11 wherein an inner edge of said cathode and said conduit are separated by a gap of approximately 0.060 mm.
13. The photodiode of claim 11 wherein said doped diffusion region in the back side region in electrical communication with a metallic area to form at least one back side cathode is an n-type doped diffusion region.
14. The photodiode of claim 2 wherein at least one of said doped diffusion regions in the back side region is in electrical communication with a metallic area to form at least one back side anode.
15. The photodiode of claim 14 wherein said doped diffusion region in the back side region in electrical communication with a metallic area to form at least one back side anode is an p-type doped diffusion region.