Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus

1. A process for producing an image display device, comprising using a laser annealing apparatus for forming a semiconductor film; and

forming a virtually belt-shaped crystal crystallized so as to grow crystal grains in a scanning direction of a laser beam by scanning the laser beam over the substrate with irradiating the laser beam to any portion of the semiconductor film formed on the substrate placed on a stage,

wherein the laser annealing apparatus includes a CW laser beam oscillator;

a modulating unit for controlling a time-base pulse width and pulse interval of the oscillated laser beam by time;

a beam shaping unit for shaping the laser beam; and

means for placing and moving the substrate to be irradiated by the laser beam controlled by time and shaped.

2. The process for producing an image display device according to claim 1 ,

wherein the laser annealing apparatus includes a focusing lens for projecting the shaped laser beam by the beam shaping unit to a semiconductor film formed on the substrate.

3. The process for producing an image display device according to claim 1 ,

wherein the beam shaping unit for shaping the laser beam is a diffraction optical element.

4. The process for producing an image display device according to claim 1 ,

wherein the shaped laser beam is linear or rectangular.

5. The process for producing an image display device according to claim 1 ,

wherein the time modulating unit for modulating a time-based pulse width and pulse interval of the CW laser beam is comprised of an EO modulator or an AO modulator.

6. The process for producing an image display device according to claim 1 ,

wherein the time based pulse width is determined by controlling the CW laser beam with time based pulse width, or with a time based pulse width and an interval is 100 ns to 100 ms.

7. The process for producing an image display device according to claim 1 ,

wherein polarization is controlled by applying a voltage from an external power supply to an EO modulator while determining a time based pulse width by controlling the CW laser beam with a time based pulse width, or with a time based pulse width and interval.

8. The process for producing an image display device according to claim 1 ,

wherein the laser beam controlled by time is irradiated to the substrate by the modulator so that a time based pulse width is longer than a pulse interval.

9. The process for producing an image display device according to claim 1 ,

wherein the CW laser is comprised of a solid stage laser or a laser diode having a wave length of 240 nm to 600 nm.

10. The process for producing an image display device according to claim 1 ,

wherein the substrate is moved with a predetermined speed and pitch in synchronism with an irradiation of laser beam.

11. The process for producing an image display device according to claim 1 ,

wherein the energy density of a laser beam irradiated onto the semiconductor film is 200 mJ/cm 2 to 10 J/cm 2 .

12. The process for producing an image display device according to claim 1 ,

wherein a distribution of beam intensity in the pulse width is ±5% within a range of maximum to minimum with respect to a CW laser beam controlled by time.

13. The process for producing an image display device according to claim 1 , comprising,

forming an alignment pattern on the semiconductor film or the insulating substrate by irradiating a laser beam;

detecting the alignment pattern; and

irradiating a laser beam to a desired position.

14. The process for producing an image display device according to claim 1 ,

wherein the thin film semiconductor device is characterized by a semiconductor film comprised of virtually belt shaped crystals formed on the substrate, wherein:

a gate electrode is formed on the semiconductor film through a gate insulating film,

a charge transmitting and receiving means and second charge transmitting and receiving means are formed on the semiconductor film at a predetermined interval therebetween, and

a channel region is formed between the first and second charge transmitting and receiving means.