Semiconductor integrated circuit device and process for manufacturing the same
View Patent ↗A large area dummy pattern DL is formed in a layer underneath a target T 2 region formed in a scribe region SR of a wafer. A small area dummy pattern in a lower layer and a small area dummy pattern Ds 2 in an upper layer are disposed in a region where the inter-pattern space of a pattern (active regions L 1 , L 2 , L 3 , gate electrode 17 ), which functions as an element of a product region PR and scribe region SR, is wide. The small area dummy pattern Ds 2 in the upper layer is offset by ½ pitch relative to the small area dummy pattern Ds in the lower layer.
1. A semiconductor integrated circuit device comprising:
grooves formed in a semiconductor substrate and defining a first dummy region, second dummy regions and a third dummy region such that a width of the first dummy region is greater than a width of each of the second dummy regions and such that a width of the third dummy region is greater than a width of each of the second dummy regions;
element isolation insulating films filled in the grooves such that the element isolation insulating films are adapted to serve as an element isolation region;
a conductor pattern formed over the first dummy region and adapted to be used for optical pattern recognition; and
dummy conductor patterns formed with the same level layer as the conductor pattern,
wherein the first dummy region is formed under the conductor pattern such that the grooves are not formed under the conductor pattern,
wherein the first dummy region and the dummy conductor patterns are formed at a scribing area,
wherein the second dummy regions are spaced from one another by a predetermined spacing at the scribing area and at a product area, and
wherein the third dummy region is formed at the product area.
2. A semiconductor integrated circuit device according to claim 1 , wherein the conductor pattern is formed with the same level layer as a gate electrode of a MISFET.
3. A semiconductor integrated circuit device according to claim 1 , wherein each of the second dummy regions and the dummy conductor patterns has a line-shaped pattern.
4. A semiconductor integrated circuit device according to claim 3 , wherein edge portions of the dummy conductor patterns extend over the second dummy regions.
5. A semiconductor integrated circuit device according to claim 3 , wherein edge portions of the dummy conductor patters are shifted from edge portions of the second dummy regions.
6. A semiconductor integrated circuit device comprising:
a groove formed in a semiconductor substrate and defining a first dummy region, second dummy regions and a third dummy region such that a width of the first dummy region is greater than a width of each of the second dummy regions and such that a width of the third dummy region is greater than a width of each of the second dummy regions;
an element isolation insulating film filled in the groove such that the element isolation insulating film is adapted to serve as an element isolation region;
a conductor pattern formed over the first dummy region and adapted to be used for optical pattern recognition; and
dummy conductor patterns formed with the same level layer as the conductor pattern,
wherein the first dummy region is formed under the conductor pattern such that the grooves are not formed under the conductor pattern,
wherein the first dummy region and the dummy conductor patterns are formed at a scribing area,
wherein the second dummy regions are spaced from one another by a predetermined spacing at the scribing area and at a product area, and
wherein the third dummy region is formed at the product area.
7. A semiconductor integrated circuit device according to claim 6 , wherein the conductor pattern is formed with the same level layer as a gate electrode of a MISFET.
8. A semiconductor integrated circuit device according to claim 6 , wherein each of the second dummy regions and the dummy conductor patterns has a line-shaped pattern.
9. A semiconductor integrated circuit device according to claim 8 , wherein edge portions of the dummy conductor patters extending over the second dummy regions.
10. A semiconductor integrated circuit device according to claim 8 , wherein edge portions of the dummy conductor patterns are shifted from edge portions of the second dummy regions.