IP Library › Granted Patent US 7,566,663
Granted Patent B2
US 7,566,663 · App. 11/641,913 · Granted Jul 28, 2009

Method for manufacturing semiconductor device or semiconductor wafer using a chucking unit

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Quick Facts
Patent No.
US 7,566,663
App. No.
11/641,913
Granted
Jul 28, 2009
Kind
B2
Abstract

A method for manufacturing a semiconductor device or a semiconductor wafer using a chucking unit is provided to remove a slurry that adheres to the back surface of the semiconductor wafer. An edge portion of a semiconductor wafer is polished while a back surface of the semiconductor wafer is chucked to a chucking unit of a first polishing unit. The polished semiconductor wafer is then dechucked from the chucking unit of the first polishing unit. Next, a gap is formed above the chucking unit of the second polishing unit, and the semiconductor wafer is disposed therein. Water is discharged from the chucking unit of the second polishing unit to clean the back surface of the semiconductor wafer W. Thereafter, the back surface of the semiconductor wafer is chucked to the chucking unit of the second polishing unit, and the semiconductor wafer is polished.

Claims (24)

1. A method for manufacturing a semiconductor device or a semiconductor wafer, comprising:

machining a semiconductor wafer while a back surface of said semiconductor wafer is chucked to a chucking unit of a first machining member;

dechucking said semiconductor wafer from said chucking unit of said first machining member;

cleaning the back surface of said semiconductor wafer with a liquid; and

polishing said semiconductor wafer while chucking a back surface of said semiconductor wafer to a chucking unit of a second machining member,

wherein said cleaning the back surface of said semiconductor wafer includes at least one of a first cleaning operation and a second cleaning operation,

wherein said first cleaning operation includes:

dechucking said semiconductor wafer from the chucking unit of said first machining member;

forming a predetermined gap between the chucking unit of said first machining member and said semiconductor wafer; and

cleaning the back surface of said semiconductor wafer by discharging a liquid from said chucking unit of said first machining member; and

wherein said second cleaning operation includes:

dechucking said semiconductor wafer from the chucking unit of said first machining member;

forming a predetermined gap between the chucking unit of said second machining member and said semiconductor wafer; and

cleaning the back surface of said semiconductor wafer by discharging a liquid from said chucking unit of said second machining member.

2. the method for manufacturing the semiconductor device or the semiconductor wafer according to claim 1 , wherein, in said cleaning the back surface of said semiconductor wafer, a water pressure of the liquid discharged from said chucking unit is within a range of from 0.05 MPa to 0.5 MPa, and a distance between the back surface of said semiconductor wafer and said chucking unit that discharges the fluid is within a range of from 0.5 mm to 5 mm.

3. The method for manufacturing the semiconductor device or the semiconductor wafer according to claim 1 , wherein, in said cleaning the back surface of said semiconductor wafer, the fluid is discharged from said chucking unit toward a substantially central position in the back surface of said semiconductor wafer, and the fluid flows from substantially central position in the back surface of said semiconductor wafer toward an edge portion thereof.

4. The method for manufacturing the semiconductor device or the semiconductor wafer according to claim 1 , wherein, in said cleaning the back surface of said semiconductor wafer, an edge portion of said semiconductor wafer is held with a retaining unit of a transfer device.

5. The method for manufacturing the semiconductor device or the semiconductor wafer according to claim 1 , wherein said cleaning the back surface of said semiconductor wafer includes:

dechucking said semiconductor wafer from the chucking unit of said first machining member;

forming a gap between the chucking unit of said second machining member and said semiconductor wafer; and

cleaning the back surface of said semiconductor wafer by discharging the liquid from said chucking unit of said second machining member.

6. The method for manufacturing the semiconductor device or the semiconductor wafer according to claim 5 , wherein, before said forming the gap between the chucking unit of said second machining member and said semiconductor wafer, the chucking unit of said second machining member is drove rotation.

7. The method for manufacturing the semiconductor device or the semiconductor wafer according to claim 1 , wherein said machining the semiconductor wafer and polishing said semiconductor wafer include: polishing the edge portion of said semiconductor wafer.

8. The method for manufacturing the semiconductor device or the semiconductor wafer according to claim 7 , wherein said semiconductor wafer includes: at least one selected from the group consisting of a semiconductor layer, an insulating layer and an interconnect layer, which is located on a substrate.