Semiconductor device including voltage level conversion output circuit

1. A semiconductor device comprising:

an internal circuit for generating an output signal; and

an output circuit, connected to the internal circuit, for converting a voltage level of the output signal of the internal circuit, the output circuit including:

a plurality of first output transistors connected to a plurality of high-potential power supplies and having different voltage, respectively;

a second output transistor connected to a low-potential power supply and to the plurality of first output transistors; and

a control circuit for selecting one of the plurality of first output transistors according to a voltage selection signal, and causing the selected first output transistor and the second output transistor to perform a level conversion operation.

2. The semiconductor device according to claim 1 , further comprising wiring connected to the high-potential power supplies,

wherein the output circuit is one of a plurality of output circuits arranged along the wiring; and

the plurality of first output transistors of each output circuit are arranged in a direction perpendicular to the wiring.

3. The semiconductor device according to claim 1 , wherein the plurality of first output transistors include:

a first transistor connected to a first high-potential power supply;

a second transistor connected to a second high-potential power supply having a voltage higher than a voltage of the first high-potential power supply; and

the second output transistor is connected between a low-potential power supply, the first transistor, and the second transistor.

4. The semiconductor device according to claim 2 , further comprising:

a pad connected to a node between the second output transistor, the first transistor, and the second transistor.

5. The semiconductor device according to claim 3 , wherein the first transistor has a back gate connected to the second high-potential power supply.

6. The semiconductor device according to claim 1 , further comprising a signal generation circuit, connected to the output circuit, for generating the voltage selection signal, wherein the signal generation circuit includes a fuse that is broken when the voltage selection signal for selecting a specific one of the plurality of output cells is generated.

7. The semiconductor device according to claim 1 , further comprising:

a rewritable storage unit for storing setting information of voltage; and

a signal generation circuit, connected to the storage unit, for generating the voltage selection signal based on the stored setting information.

8. The semiconductor device according to claim 1 , further comprising a plurality of input buffers, each having a different threshold voltage and generating a buffer output signal according to the threshold voltage, wherein an operating voltage of a device connected to the semiconductor device is detected based on the buffer output signal of each input buffer, and the voltage selection signal is generated based on the detected operating voltage.

9. The semiconductor device according to claim 1 , further comprising:

a first input buffer having a first low-potential power supply terminal, connected to a first high-potential power supply, and a first high-potential power supply terminal, connected to a second high-potential power supply having a voltage higher than a voltage of the first high-potential power supply, wherein the first input buffer receives an external signal and generates a buffer output signal; and

a second input buffer having a second low-potential power supply terminal, connected to a low-potential power supply, and a second high-potential power supply terminal, connected to the second high-potential power supply, wherein the second input buffer receives the buffer output signal from the first input buffer and generates the voltage selection signal.