Semiconductor memory device and a method of manufacturing the same
View Patent ↗A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly comprise laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.
1. A method of manufacturing a semiconductor device including memory cells having MISFETs, comprising steps of:
(a) forming a first film over a conductive film formed over a main surface of a semiconductor substrate;
(b) patterning the first film to form first patterns each having a shape extending in a first direction;
(c) patterning the first patterns in a second direction perpendicular to the first direction to form second patterns each separated in the first direction; and
(d) patterning the conductive film by using the second patterns to form gate electrodes of the MISFETs.
2. A method according to claim 1 ,
wherein a gate pattern of the first film for a gate electrode of a MISFET in a peripheral circuit is formed by using the step (b) or the step (c).
3. A method according to claim 1 ,
wherein a gate pattern of the first film for a gate electrode of a MISFET in a peripheral circuit is formed by using the step (b), the step (c) and the step (d).
4. A method according to claim 1 ,
wherein the first film includes an inorganic film.
5. A method according to claim 4 ,
wherein the inorganic film includes a silicon oxide film.
6. A method according to claim 1 ,
wherein each memory cell includes a first MISFET and a second MISFET arranged so that the first MISFET and the second MISFET are cross-coupled,
wherein, in the step (d), gate electrodes of the first MISFETs and the second MISFETs are formed, and
wherein the memory cells arranged in the first direction are arranged with the same layout pattern in the first direction.
7. A method according to claim 1 ,
wherein each memory cell includes a first MISFET and a second MISFET arranged so that the first MISFET and the second MISFET are cross-coupled,
wherein, in the step (d), gate electrodes of the first MISFETs and the second MISFETs are formed,
wherein the memory cells arranged in the second direction are arranged with a layout of axial symmetry with respect to a boundary line between the memory cells aligned in the first direction.
8. A method according to claim 1 ,
wherein each memory cell includes a first MISFET and a second MISFET arranged so that the first MISFET and the second MISFET are cross-coupled,
wherein, in the step (d), gate electrodes of the first MISFETs and the second MISFETs are formed,
wherein the first MISFET and the second MISFET are arranged with point symmetry with respect to a centerpoint in a memory cell forming region.
9. A method according to claim 1 ,
wherein the memory cell comprises a memory cell of a static random access memory.
10. A method of manufacturing a semiconductor device including memory cells having MISFETs, comprising steps of:
(a) forming a first film over a conductive film formed over a main surface of a semiconductor substrate;
(b) patterning the first film to form first patterns each having a shape extending in a first direction;
(c) patterning the first patterns in a second direction perpendicular to the first direction to form second patterns each separated in the first direction; and
(d) patterning the conductive film by using the second patterns to form gate electrodes of the MISFETs,
wherein each of the memory cells constitutes a memory cell of a static random access memory,
wherein the memory cell includes a first MISFET and a second MISFET such that the first MISFET and the second MISFET are cross-coupled, and
wherein the first MISFET and the second MISFET are arranged with point symmetry with respect to a centerpoint in a memory cell forming region.
11. A method according to claim 10 ,
wherein a gate pattern of the first film for a gate electrode of a MISFET in a peripheral circuit is formed by using the step (b) or the step (c).
12. A method according to claim 10 ,
wherein a gate pattern of the first film for a gate electrode of a MISFET in a peripheral circuit is formed by using the step (b), the step (c) and the step (d).
13. A method according to claim 10 ,
wherein the first film includes a silicon oxide film.
14. A method according to claim 10 ,
wherein, in the step (d), gate electrodes of the first MISFETs and the second MISFETs are formed, and
wherein the memory cells arranged in the first direction are arranged with the same layout pattern in the first direction.
15. A method according to claim 10 ,
wherein, in the step (d), gate electrodes of the first MISFETs and the second MISFETs are formed, and
wherein the memory cells arranged in the second direction are arranged with a layout of axial symmetry with respect to a boundary line between the memory cells aligned in the first direction.
16. A method of manufacturing a semiconductor device including memory cells having MISFETs, comprising steps of:
(a) forming a first film over a conductive film formed over a main surface of a semiconductor substrate;
(b) patterning the first film to form first patterns each having a shape extending in a first direction;
(c) patterning the first patterns in a second direction perpendicular to the first direction to form second patterns each separated in the first direction; and
(d) patterning the conductive film by using the second patterns to form gate electrode patterns of the MISFETs,
wherein each of the memory cells constitutes a memory cell of a static random access memory,
wherein the memory cell includes a first MISFET and a second MISFET, and
wherein the gate electrode patterns of the MISFETs have, respectively, a rectangle shape such that a width, in the first direction, of the rectangle shape is greater than a width, in the second direction, of the rectangle shape.
17. A method according to claim 16 ,
wherein a gate pattern of the first film for a gate electrode of a MISFET in a peripheral circuit is formed by using the step (b) or the step (c).
18. A method according to claim 16 ,
wherein a gate pattern of the first film for a gate electrode of a MISFET in a peripheral circuit is formed by using the step (b), the step (c) and the step (d).
19. A method according to claim 16 ,
wherein the first film includes a silicon oxide film.
20. A method according to claim 16 ,
wherein, in the step (d), gate electrodes of the first MISFETs and the second MISFETs are formed, and
wherein the memory cells arranged in the first direction are arranged with the same layout pattern in the first direction.
21. A method according to claim 16 ,
wherein, in the step (d), gate electrodes of the first MISFETs and the second MISFETs are formed, and
wherein the memory cells arranged in the second direction are arranged with a layout of axial symmetry with respect to a boundary line between the memory cells aligned in the first direction.
22. A method according to claim 16 ,
wherein, in the step (d), gate electrodes of the first MISFETs and the second MISFETs are formed, and
wherein the first MISFET and the second MISFET are arranged with point symmetry with respect to a centerpoint in a memory cell forming region.