Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting

1. A method for performing pasting in a deposition chamber, comprising:

depositing a Ti pasting layer on at least an interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions;

after depositing the Ti pasting layer, depositing a TiTa pasting layer on the interior portion of the deposition chamber by sputtering a TiTa target;

after depositing the TiTa pasting layer, sputtering magnesium in a flow of oxygen gas to deposit a MgO pasting layer on at least the interior portion of the deposition chamber; and

after depositing the MgO pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber, wherein the second layer comprises at least one of MgO and Mg.

2. The method of claim 1 , wherein the wafer includes a plurality of layers including the second layer wherein the plurality of layers forms at least one tunneling magneto-resistive read head.

3. The method of claim 1 , further comprising:

after the second layer has been deposited on the wafer and before a third layer is deposited on a second wafer, depositing a Ti pasting layer on at least the interior portion of the deposition chamber.

4. A method for performing pasting in a deposition chamber, comprising:

depositing a TiTa pasting layer on at least an interior portion of the deposition chamber by sputtering a TiTa target, thereby reducing contaminants in the deposition chamber for subsequent depositions;

after depositing the TiTa pasting layer, depositing a Ti pasting layer on at least the interior portion of the deposition chamber;

after depositing the Ti pasting layer, sputtering magnesium in a flow of oxygen gas to deposit a MgO pasting layer on at least the interior portion of the deposition chamber; and

after depositing the MgO pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber, wherein the second layer comprises at least one of MgO and Mg.

5. The method of claim 4 , wherein the wafer includes a plurality of layers including the second layer, wherein the plurality of layers forms at least one tunneling magneto-resistive read head.

6. The method of claim 4 , further comprising:

after the second layer has been deposited on the wafer, and before a third layer is deposited on a second wafer, depositing a further TiTa pasting layer on at least the interior portion of the deposition chamber.

7. A method for performing pasting in a deposition chamber, comprising:

depositing a TiTa pasting layer on at least an interior portion of the deposition chamber by sputtering a target comprising at least one of Ti and Ta, thereby reducing contaminants in the deposition chamber for subsequent depositions, wherein the TiTa pasting layer is at least approximately 100 Angstroms thick; and

depositing a second layer on a wafer in the deposition chamber, wherein the second layer comprises at least one of MgO and Mg.

8. The method of claim 7 , wherein no MgO pasting layer is pasted on at least the interior portion of the deposition chamber before the second layer is deposited.

9. The method of claim 7 , wherein the wafer includes a plurality of layers including the second layer, wherein the plurality of layers forms at least one tunneling magneto-resistive read head.

10. The method of claim 4 , wherein depositing the TiTa pasting layer comprises alternating between the TiTa target and a Ti target to deposit alternating layers of Ti and TiTa that form the TiTa pasting layer.

11. The method of claim 1 , further comprising, before depositing the MgO pasting layer, repeatedly depositing the Ti pasting layer and the TiTa pasting layer on the interior portion of the deposition chamber.