Lorentz magnetoresistive sensor with integrated signal amplification
View Patent ↗A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.
1. A Lorentz magnetoresistive sensor, comprising:
a substrate;
an amplifier formed within the substrate; and
a Lorentz magnetoresistive sensor formed on the substrate and electrically connected with the amplifier;
wherein the Lorentz magnetoresistive sensor comprises a plurality of materials forming a quantum well structure and an electrically conductive shunt connected with the quantum well structure.
2. A Lorentz magnetoresistive sensor, comprising:
a substrate;
an amplifier formed within the substrate; and
a Lorentz magnetoresistive sensor formed on the substrate and electrically connected with the amplifier;
wherein the sensor comprises first second and third layers of semiconductor materials each having a band gap, the second layer being formed between the first and third layers and having a band gap that is less than the band gap of the first and third layers.
3. A Lorentz magnetoresistive sensor, comprising:
a substrate;
an amplifier formed within the substrate; and
a Lorentz magnetoresistive sensor formed on the substrate and electrically connected with the amplifier;
wherein the sensor further comprises a magnetically active region comprising a layer of semiconductor material and an electrically conducting shunt structure electrically connected with the magnetically active region.
4. A Lorentz magnetoresistive sensor, comprising:
a substrate;
an amplifier formed within the substrate; and
a Lorentz magnetoresistive sensor formed on the substrate and electrically connected with the amplifier;
wherein the sensor further comprises a magnetically active region comprising a layer of silicon and an electrically conducting shunt structure electrically connected with the magnetically active region.
5. A Lorentz magnetoresistive sensor, comprising:
a substrate;
an amplifier formed within the substrate; and
a Lorentz magnetoresistive sensor formed on the substrate and electrically connected with the amplifier;
wherein the substrate comprises a semiconductor, and further comprising an oxide layer formed between the EMR sensor and the semiconductor of the substrate.
6. A Lorentz magnetoresistive sensor, comprising:
a substrate;
an amplifier formed within the substrate; and
a Lorentz magnetoresistive sensor formed on the substrate and electrically connected with the amplifier;
wherein the substrate comprises Si, and further comprising an oxide layer formed between the EMR sensor and the substrate.
7. A Lorentz magnetoresistive sensor, comprising:
a substrate;
an amplifier formed within the substrate; and
a Lorentz magnetoresistive sensor formed on the substrate and electrically connected with the amplifier;
wherein the amplifier has a gate, the sensor further comprising, a voltage lead connected with the EMR sensor and connected with a gate of the amplifier.
8. A magnetoresistive sensor, comprising:
a substrate comprising a semiconductor material;
a magnetically active structure formed on the substrate;
an electrically conductive shunt structure connected with the magnetically active structure;
first and second voltage leads connected with the magnetically active structure;
a first amplifier integrated into the substrate and having a gate connected with the first voltage lead; and
a second amplifier integrated into the substrate and having a gate connected with the second voltage lead.
9. A magnetoresistive sensor as in claim 8 wherein the magnetically active structure includes a semiconductor heterostructure that forms a quantum well.
10. A magnetoresistive sensor as in claim 8 wherein the magnetically active structure includes a layer of semiconductor material.
11. A magnetoresistive sensor as in claim 8 further wherein the substrate further comprises a layer of oxide formed between the semiconductor material of the substrate and the magnetically active structure and shunt structure.