IP Library Granted Patent US 7,558,107
Granted Patent B2
US 7,558,107 · App. 11/868,342 · Granted Jul 7, 2009

Non volatile memory

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Quick Facts
Patent No.
US 7,558,107
App. No.
11/868,342
Granted
Jul 7, 2009
Kind
B2
Abstract

An electrically programmable and erasable non-volatile semiconductor memory such as a flash memory is designed into a configuration in which, when a cutoff of the power supply occurs in the course of a write or erase operation carried out on a memory cell employed in the non-volatile semiconductor memory, the operation currently being executed is discontinued and a write-back operation is carried out to change a threshold voltage of the memory cell in the reversed direction. In addition, the configuration also allows the number of charge-pump stages in an internal power-supply configuration to be changed in accordance with the level of a power-supply voltage so as to make the write-back operation correctly executable. As a result, no memory cells are put in deplete state even in the event of a power-supply cutoff in the course of a write or erase operation.

Claims (12)

1. A nonvolatile memory apparatus, comprising:

a nonvolatile memory array divided into plural blocks, each of which includes plural nonvolatile memory cells and has an area used for storing predetermined information; and

a control circuit,

wherein the predetermined information indicates that data writing to the block is not complete,

wherein the control circuit stores address information associated with a block having the predetermined information stored in the area thereof, and can output the address information in response to an instruction from outside.

2. A nonvolatile memory apparatus according to claim 1 ,

wherein the control circuit surveys the nonvolatile memory array to determine whether any block stores the predetermined information in the respective area thereof, after a power on reset operation.

3. A nonvolatile memory apparatus according to claim 2 ,

wherein the control circuit can output result information of the surveying to outside.

4. A nonvolatile memory apparatus according to claim 3 , further comprising a status register,

wherein the status register includes a status field for storing the result information, and

wherein the control circuit outputs the result information of the status register in response to receiving a status read command.

Assignments (4)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2014
From: HITACHI ULSI SYSTEMS CO., LTD.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 032859/0252 →
CHANGE OF NAME Recorded Aug 13, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024864/0635 →
MERGER Recorded Aug 13, 2010
From: RENESAS TECHNOLOGY CORP.
To: NEC ELECTRONICS CORPORATION
Reel/Frame 024879/0190 →